BAS21T datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> BAS21T

Preview

BAS21T: Description0.2 A, 250 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size256KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

Download Datasheet Parametric View All

BAS21T Overview

0.2 A, 250 V, SILICON, SIGNAL DIODE

BAS21T Parametric

Parameter Name	Attribute value
Maker	SECOS
package instruction	ROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.15 W
Maximum repetitive peak reverse voltage	250 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL

Preview

Download Datasheet

View All

BAS21T

Elektronische Bauelemente

0.4A , 250V

Plastic-Encapsulated Diode

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Fast switching speed

For General Purpose Switching Applications

High Conductance

1

SOT-523

A

L

3

Top View

2

C B

1

2

MARKING

T3

K

E

D

F

G

REF.

Millimeter

Min.

Max.

1.5

1.7

1.45

1.75

0.75

0.85

0.7

0.9

1.1

0.15

0.25

H

REF.

G

H

J

K

L

M

Millimeter

Min.

Max.

-

0.1

0.55 REF.

0.1

0.2

-

0.5 TYP.

0.25

0.325

J

PACKAGE INFORMATION

Package

SOT-523

MPQ

3K

Leader Size

7 inch

A

B

C

D

E

F

ABSOLUTE MAXIMUM RATINGS

(T

A

=25°C unless otherwise specified)

Parameter

Maximum Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

Reverse voltage

Peak forward Continuous current

Maximum Average Forward Rectified Current

Peak Forward Surge Current 8.3 ms Single Half

t=1.0µs

Sine-Wave Super Imposed on Rated Load (JEDEC

t=1.0s

Method)

Power dissipation

Typical Thermal Resistance Junction to Ambient

Operating Junction and storage temperature range

Symbol

V

RRM

V

RWM

V

R

I

FM

I

F(AV)

I

FSM

Value

Unit

250

V

400

200

2.5

mA

A

0.5

P

D

R

θJA

T

J

,T

STG

150

833

150, -65~150

mW

° /W

C

°

C

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

21-Jul-2011 Rev. A

Page 1 of 2

Recommended Resources

Ordinary optocoupler isolation circuit diagram

XDH-3B electrocardiograph circuit

Constant current overcurrent protection circuit diagram

Overcurrent and overvoltage protection circuit diagram of electronic ballast

TEA1062 call circuit diagram

Simple electronic keyboard circuit

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components