2SD882DQ datasheet, PDF - EEWORLD Datasheet

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2SD882DQ: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size329KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2SD882DQ Overview

Transistor

2SD882DQ Parametric

Parameter Name	Attribute value
Reach Compliance Code	compli
Base Number Matches	1

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2SD882D

Elektronische Bauelemente

RoHS Compliant Product

NPN Epitaxial Planar

General Purpose Transistor

TO-252

Description

The 2SD882D is designed for using in output stage of

20W

amplifier, voltage regulator, DC-DC converter and relay driver.

REF.

A

B

C

D

E

F

S

o

Millimeter

Min.

Max.

6.40

6.80

5.20

5.50

6.80

7.20

2.20

2.80

2.30 REF.

0.70

0.90

0.60

0.90

REF.

G

H

J

K

L

M

R

Millimeter

Min.

Max.

0.50

0.70

2.20

2.40

0.45

0.55

0

0.15

0.90

1.50

5.40

5.80

0.80

1.20

Absolute Maximum Ratings at T

A

=25 C (unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collect Current

Collect Current (Pulse)

Base Current

Total Power Dissipation

(TC=25

C )

o

Symbol

V

CBO

V

CEO

V

E BO

I

C

I

C

I

B

P

D

Tj, Tstg

o

Ratings

40

30

5

.

3

7

0.6

Unit

V

A

o

10

-55~+150

Operating Junction and Storage Temperature Range

W

C

ELECTRICAL CHARACTERISTICS Tamb=25

C

unless otherwise specified

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

Collector Saturation Voltage

Base Satruation Voltage

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

*V

CE

(sat)

*V

BE

(sat)

*h

FE

1

*h

FE

2

fT

C

ob

Min

40

30

5

-

30

100

-

Typ.

-

1

-

90

45

Max

-

Unit

V

uA

V

Test Conditions

I

C

= 100µA,I

E

=0

I

C

= 1mA,I

B

=0

I

E

= 10µA,I

C

=0

V

CB

= 30V,I

E

=0

V

BE

= 3 V,I

C

=0

I

C

= 2 A,I

B

= 0.2A

I

C

= 2A,I

B

= 0.2A

V

CE

= 2 V, I

C

= 20mA

V

CE

= 2 V, I

C

=1 A

1

0.5

2

-

500

-

V

MH z

pF

V

CE

= 5V, I

C

= 0.1A,f=100MHz

V

CB

= 10 V , f=1MHz,I

E

=0

Notes: *Pulse width

≦

380us, dutycycle

≦

2%

Classification of hFE2

Rank

Range

http://www.SeCoSGmbH.com/

Q

100~200

P

160~320

E

250~500

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of

3

2SD882DQ Related Products

	2SD882DQ	2SD882D
Description	Transistor	Transistor
Reach Compliance Code	compli	compli
Base Number Matches	1	1

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