2SA1386AO datasheet, PDF - EEWORLD Datasheet

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2SA1386AO: DescriptionPower Bipolar Transistor, 15A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT100, TO-3P, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size24KB，1 Pages; ManufacturerSANKEN; Websitehttp://www.sanken-ele.co.jp/en/

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2SA1386AO Overview

Power Bipolar Transistor, 15A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT100, TO-3P, 3 PIN

2SA1386AO Parametric

Parameter Name	Attribute value
Parts packaging code	TO-3P
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	180 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	40 MHz
Base Number Matches	1

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LAPT

2SA1386/1386A

Application :

Audio and General Purpose

(Ta=25°C)

Ratings

2SA1386A

2SA1386

–100

max

V

CB

=

I

EBO

V

(BR)CEO

h

FE

V

CE

(sat)

f

T

C

OB

V

EB

=–5V

I

C

=–25mA

V

CE

=–4V, I

C

=–5A

I

C

=–5A, I

B

=–0.5A

V

CE

=–12V, I

E

=2A

V

CB

=–10V, f=1MHz

–160

min

–100

max

–180

–100

max

–180

min

50

min

∗

–2.0

max

40

typ

500

typ

V

MHz

pF

5.45

±0.1

B

C

E

5.45

±0.1

1.4

20.0min

4.0max

2

3

1.05

+0.2

-0.1

0.65

+0.2

-0.1

Silicon PNP Epitaxial Planar Transistor

(Complement to type 2SC3519/A)

s

Absolute maximum ratings

(Ta=25°C)

s

Electrical Characteristics

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

Tj

T

stg

Ratings

2SA1386 2SA1386A

–160

–5

–15

–4

130(Tc=25°C)

150

–55 to +150

–180

Unit

V

A

W

°C

Symbol

I

CBO

Conditions

External Dimensions

MT-100(TO3P)

5.0

±0.2

15.6

±0.4

9.6

2.0

1.8

4.8

±0.2

2.0

±0.1

Unit

µ

A

µ

A

V

19.9

±0.3

V

4.0

a

b

ø3.2

±0.1

s

Typical Switching Characteristics (Common Emitter)

V

CC

(V)

–40

R

L

(Ω)

4

I

C

(A)

–10

V

BB1

(V)

–10

V

BB2

(V)

5

∗h

FE

Rank O(50 to 100), P(70 to 140), Y(90 to 180)

I

B1

(A)

–1

I

B2

(A)

1

t

on

(

µ

s)

0.3typ

t

stg

(

µ

s)

0.7typ

t

f

(

µ

s)

0.2typ

Weight : Approx 6.0g

a. Part No.

b. Lot No.

I

C

– V

CE

Characteristics

(Typical)

C o l l ec t or - Em i t t e r Sa t ur at i on Vo lt a ge V

C E (s at)

( V )

–15

–5

00

V

C E

( sat ) – I

B

Characteristics

(Typical)

–3

I

C

– V

BE

Temperature Characteristics

(Typical)

–15

( V

C E

=– 4 V )

m

A

–7

00

–4

00

m

A

–300mA

C o l l ec t or C u r r e n t I

C

( A)

–200mA

–10

C o l l e c to r C u r r e n t I

C

( A)

–2

–10

–150mA

em

p)

e Te

mp)

(Cas

25˚C

–100mA

–5

–1

–5

Cas

eT

˚C (

I

B

=–20mA

–5 A

0

–1

–2

–3

–4

0

–0 .2

– 0. 4

– 0. 6

–0 . 8

– 1 .0

0

125

I

C

= – 10 A

–30˚

C (C

–50mA

–1

B a s e - E m i t t o r Vo l ta g e V

B E

( V)

ase

Tem

p)

–2

Co ll e ct o r -Em i t te r V ol tag e V

C E

(V )

B as e C ur r en t I

B

( A)

h

FE

– I

C

Characteristics

(Typical)

(V

C E

= – 4 V )

300

DC C u r r e nt Ga i n h

FE

h

F E

– I

C

Temperature Characteristics

(Typical)

( V

C E

= – 4 V)

200

DC C u r r e nt Ga i n h

FE

Transient Thermal Resistance

θ

j-a

( ˚ C / W )

3

θ

j- a

– t Characteristics

12 5˚ C

100

25 ˚ C

– 30 ˚ C

50

1

0. 5

100

Typ

10

–0.02

– 0. 1

–0. 5

–1

–5 –10 –15

20

–0.02

–0 .1

– 0. 5

–1

–5

– 10 – 15

0. 1

1

10

100

T i m e t( m s )

1 0 0 0 20 0 0

C ol l e ct o r C u rre nt I

C

(A )

Co l le c to r Cu r r en t I

C

( A)

f

T

– I

E

Characteristics

(Typical)

(V

C E

=– 1 2 V )

60

–40

Safe Operating Area

(Single Pulse)

130

10

ms

Pc – T a Derating

–10

Cut- off Fr e q u e n c y f

T

( M H

Z

)

Ty

p

DC

Ma xi mu m Po we r Di s s i p at i o n P

C

( W )

100

W

40

C olle c tor C u r r e n t I

C

( A )

–5

ith

In

fin

ite

he

at

–1

–0.5

Without Heatsink

Natural Cooling

1. 2 SA13 86

2. 2SA1 3 86 A

–0.1

1

2

–2 0 0

si

nk

50

20

0

0.02

0.1

1

10

– 0 .0 5

–3

–1 0

– 50

–1 00

3.5

0

W i t h o ut H e at s i n k

0

25

50

75

1 00

12 5

150

Emi t t e r Cur ren t I

E

(A)

C ol l ec t or - Em i t te r Vol t ag e V

C E

( V)

A m b i en t T e m p e r a tu r e T a ( ˚ C )

18

2SA1386AO Related Products

	2SA1386AO	2SA1386AY	2SA1386Y	2SA1386P	2SA1386O	2SA1386AP
Description	Power Bipolar Transistor, 15A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT100, TO-3P, 3 PIN	Power Bipolar Transistor, 15A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT100, TO-3P, 3 PIN	Power Bipolar Transistor, 15A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT100, TO-3P, 3 PIN	Power Bipolar Transistor, 15A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT100, TO-3P, 3 PIN	Power Bipolar Transistor, 15A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT100, TO-3P, 3 PIN	Power Bipolar Transistor, 15A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT100, TO-3P, 3 PIN
Parts packaging code	TO-3P	TO-3P	TO-3P	TO-3P	TO-3P	TO-3P
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	MT100, TO-3P, 3 PIN	MT100, TO-3P, 3 PIN	MT100, TO-3P, 3 PIN	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	15 A	15 A	15 A	15 A	15 A	15 A
Collector-emitter maximum voltage	180 V	180 V	160 V	160 V	160 V	180 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	90	90	70	50	70
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	40 MHz	40 MHz	40 MHz	40 MHz	40 MHz	40 MHz
Base Number Matches	1	1	1	1	1	1

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