2SB772D
Elektronische Bauelemente
RoHS Compliant Product
PNP Type
Plastic Encapsulate Transistors
TO-252(D-Pack)
6. 50
5. 30
0. 15
0. 10
0. 51
0. 05
2. 30
0. 10
0. 20
9. 70
P
CM
: 1.25 W ( Ta = 25
)
0. 75
0
0. 10
5
5
.
Collector Current
I
CM
: -3 A
0. 15
1. 60
0. 51
1 2 3
1. BASE
2. COLLECTOR
3. EMITTER
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 )
TYPE NUMBER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Operating and
Storage Junction Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
H
FE(2)
V
CE (sat)
V
BE(sat)
f
T
T
J
, T
STG
TEST CONDITIONS
I
C
= - 100 µA, I
E
= 0 A
I
C
= - 10 mA, I
B
= 0 A
I
E
= - 100 µA, I
C
= 0 A
V
CB
= - 40 V, I
E
= 0 A
V
CE
= - 30 V, I
B
= 0 A
V
EB
= - 6 V, I
C
= 0 A
V
CE
= - 2 V, I
C
= -1 A
V
CE
= - 2 V, I
C
= -100 mA
I
C
= - 2 A, I
B
= -0.2 A
I
C
= - 2 A, I
B
= -0.2 A
V
CE
= - 5 V, I
C
= -0.1 A,
f = 10 MHz
-
Min.
- 40
- 30
-6
-
-
-
60
32
-
-
50
Typ.
-
-
-
-
-
-
-
-
-
-
-
- 55 ~ +150
Max.
-
-
-
-1
- 10
-1
400
-
- 0.5
- 1.5
-
UNIT
V
V
V
µA
µA
µA
V
V
MHz
h
FE
VALUES ARE CLASSIFIED AS FOLLOWS:
ITEM
h
FE
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
GR
200 ~ 400
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
2. 70
V
(BR)CBO
: - 40 V
2. 30
0. 10
0. 60
2. 30
0. 10
0. 10
0
9
0. 20
.
Collector-Base Voltage
0. 6
0. 80
0. 10
5. 50
.
Power Dissipation
0. 10
0. 51
0. 10 1. 20
0. 10
FEATURES
5
2SB772D
Elektronische Bauelemente
PNP Type
Plastic Encapsulate Transistors
ELECTRICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
150
Fig.2 Derating curve of safe
operating areas
12
Fig.3 Power Derating
-Ic,Collector current(A)
1.6
1.2
100
Power Dissipation(W)
150
200
- Ic Derating(%)
-IB=9mA
-IB=8MA
-IB=7mA
-IB=6mA
-IB=5mA
S/
b
8
0.8
lim
ite
d
D
pa
si
is
-IB=4mA
-IB=3mA
0.4
50
4
n
tio
lim
-IB=2mA
-IB=1mA
0
d
ite
0
0
4
8
12
16
20
0
-50
0
50
100
-50
0
50
100
150
200
-Collector-Emitter voltage(V)
Tc,Case Temperature(°C)
Tc,Case Temperature(°C)
Fig.4 Collector Output
capacitance
3
10
3
10
Fig.5 Current gain-
bandwidth product
1
10
Fig.6 Safe operating area
Ic(max),Pulse
10
mS
Output Capacitance(pF)
F
T
(MHz), Current gain-
bandwidth product
2
10
I
E
=0
f=1MHz
V
CE
=5V
2
10
-Ic,Collector current(A)
Ic(max),DC
1m
S
0.
1m
S
10
0
I
B
=8mA
1
10
1
10
-1
10
0
10
10
0
-1
10
-2
10
-3
10
0
10
-2
10
-1
10
10
0
1
10
-2
10
10
0
1
10
2
10
-Collector-Base Voltage(v)
Ic,Collector current(A)
Collector-Emitter Voltage
Fig.7 DC current gain
3
10
4
10
Fig.8 Saturation Voltage
V
CE
=-2V
-Saturation Voltage(mV)
DC current Gain,H
FE
3
10
V
BE
(sat)
2
10
2
10
1
10
V
CE
(sat)
1
10
0
10
0
10
1
10
2
10
3
10
4
10
0
10
0
10
1
10
2
10
3
10
4
10
-Ic,Collector current(mA)
-Ic,Collector current(mA)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2
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