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2C3866A

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size30KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

2C3866A Overview

Transistor

2C3866A Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
ConfigurationSingle
Minimum DC current gain (hFE)5
Polarity/channel typeNPN
Base Number Matches1
Data Sheet No. 2C3866A
Chip Type 2C3866A
Geometry 1007
Polarity NPN
Generic Packaged Parts:
2N3866, 2N3866A
Chip type
2C3866A
by Semicoa
Semiconductors provides perfor-
mance similar to these devices.
Part Numbers:
2N3866A,
2N3866, 2N3866AUB, SD3866A,
SD3866AF, SQ3866A, SQ3866AF
Product Summary:
APPLICATIONS:
Designed for amplifier,
frequency multiplier and oscillator applica-
tions. Suitable for output, driver and predriver
stages in VHF and UHF equipment.
Features:
Special Characteristics:
ft = 950 MHz (type) at 50 mA/15V
Mechanical Specifications
Metallization
Bonding Pad Size
Die Thickness
Chip Area
Top Surface
Top
Backside
Emitter
Base
Al - 15 kÅ min.
Au - 6.5 kÅ nom.
3.4 mils x 3.0 mils
3.4 mils x 3.0 mils
8 mils nominal
15 mils x 20 mils
Silox Passivated
Electrical Characteristics
T
A
= 25
o
C
Parameter
Test conditions
Min
Max
Unit
BV
CEO
I
C
= 5.0 mA
30
---
V dc
BV
CBO
I
C
= 100 µA
55
---
V dc
BV
CER
I
C
= 5.0 mA, R
BE
= 10 Ohms
55
---
V dc
BV
EBO
I
E
= 100 µA
3.5
---
V dc
I
CEO
V
CE
= 28 V, V
EB
= 2.0 V
---
20
µA
h
FE1
I
C
= 360 mA dc, V
CE
= 5.0 V
5.0
---
---
h
FE2
I
C
= 50 mA dc, V
CE
= 5.0 V
10
200
---
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 µs, duty cycle less than 2%.

2C3866A Related Products

2C3866A
Description Transistor
Reach Compliance Code compli
Configuration Single
Minimum DC current gain (hFE) 5
Polarity/channel type NPN
Base Number Matches 1

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