SO
D3
23F
BAT46WJ
Single Schottky barrier diode
Rev. 2 — 8 November 2011
Product data sheet
1. Product profile
1.1 General description
Single planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a very small and flat lead SOD323F (SC-90) Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
Low forward voltage
Reverse voltage V
R
100 V
Very small and flat lead SMD plastic
package
Low capacitance
AEC-Q101 qualified
1.3 Applications
High-speed switching
Line termination
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
V
R
V
F
I
R
[1]
Quick reference data
Parameter
reverse voltage
forward voltage
reverse current
I
F
= 250 mA
V
R
= 75 V
[1]
[1]
Conditions
Min
-
-
-
Typ
-
-
-
Max
100
850
4
Unit
V
mV
A
Pulse test: t
p
300
s;
0.02.
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Graphic symbol
1
2
sym001
[1]
The marking bar indicates the cathode.
NXP Semiconductors
BAT46WJ
Single Schottky barrier diode
3. Ordering information
Table 3.
Ordering information
Package
Name
BAT46WJ
SC-90
Description
plastic surface-mounted package; 2 leads
Version
SOD323F
Type number
4. Marking
Table 4.
BAT46WJ
Marking codes
Marking code
JK
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
FSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
Parameter
reverse voltage
forward current
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
Max
100
250
2.5
400
715
150
+150
+150
Unit
V
mA
A
mW
mW
C
C
C
square wave;
t
p
< 10 ms
T
amb
25
C
[1]
-
-
-
-
55
65
[2][4]
[3][4]
T
j
= 25
C
before surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][3]
[2][3]
Min
-
-
Typ
-
-
Max
310
175
Unit
K/W
K/W
BAT46WJ
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 8 November 2011
2 of 12
NXP Semiconductors
BAT46WJ
Single Schottky barrier diode
Thermal characteristics
…continued
Parameter
thermal resistance from
junction to solder point
Conditions
[4]
Table 6.
Symbol
R
th(j-sp)
Min
-
Typ
-
Max
35
Unit
K/W
[1]
[2]
[3]
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Reflow soldering is the only recommended soldering method.
Soldering point of cathode tab.
10
3
duty cycle =
Z
th(j-a)
(K/W)
10
2
0.25
0.1
0.05
10
0.02
0.01
1
0.75
0.5
0.33
0.2
006aac385
0
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 1.
10
3
Z
th(j-a)
(K/W)
10
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac386
duty cycle =
1
0.75
0.5
0.33
0.25
0.1
0.2
10
0.02
0
1
10
−5
10
−4
0.05
0.01
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAT46WJ
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 8 November 2011
3 of 12
NXP Semiconductors
BAT46WJ
Single Schottky barrier diode
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 0.1 mA
I
F
= 10 mA
I
F
= 10 mA; T
j
=
40 C
I
F
= 50 mA
I
F
= 50 mA; T
j
=
40 C
I
F
= 250 mA
I
R
reverse current
V
R
= 1.5 V
V
R
= 1.5 V; T
j
= 60
C
V
R
= 10 V
V
R
= 10 V; T
j
= 60
C
V
R
= 50 V
V
R
= 50 V; T
j
= 60
C
V
R
= 75 V
V
R
= 75 V; T
j
= 60
C
V
R
= 100 V
V
R
= 100 V; T
j
= 60
C
V
R
= 100 V; T
j
= 85
C
C
d
diode capacitance
f = 1 MHz
V
R
= 0 V
V
R
= 1 V
t
rr
[1]
[2]
[1]
Conditions
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[2]
Typ
175
315
-
415
-
710
0.2
-
0.3
-
0.7
-
1
-
2
-
-
-
-
5.9
Max
200
350
470
475
560
850
0.5
12
0.8
20
2
44
4
80
9
120
600
39
21
-
Unit
mV
mV
mV
mV
mV
mV
A
A
A
A
A
A
A
A
A
A
A
pF
pF
ns
reverse recovery time
Pulse test: t
p
300
s;
0.02.
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.
BAT46WJ
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 8 November 2011
4 of 12
NXP Semiconductors
BAT46WJ
Single Schottky barrier diode
1
I
F
(A)
10
−1
(1)
(2)
006aac387
(3)
(5)
(4)
I
R
(A)
10
−3
10
−4
10
−5
10
−2
(1)
006aac388
(2)
(3)
10
−2
(4)
(3)
(5)
10
−6
10
−7
10
−8
(4)
10
−3
(5)
10
−4
0.0
10
−9
0.4
0.8
V
F
(V)
1.2
0
20
40
60
80
V
R
(V)
100
(1) T
amb
= 150
C
(2) T
amb
= 125
C
(3) T
amb
= 85
C
(4) T
amb
= 25
C
(5) T
amb
=
40 C
(1) T
amb
= 125
C
(2) T
amb
= 85
C
(3) T
amb
= 60
C
(4) T
amb
= 25
C
(5) T
amb
=
40 C
Fig 3.
Forward current as a function of forward
voltage; typical values
35
C
d
(pF)
30
25
20
15
10
5
0
0
20
40
Fig 4.
Reverse current as a function of reverse
voltage; typical values
006aac389
60
80
V
R
(V)
100
f = 1 MHz; T
amb
= 25
C
Fig 5.
Diode capacitance as a function of reverse voltage; typical values
BAT46WJ
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 8 November 2011
5 of 12
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