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2C3960

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size28KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

2C3960 Overview

Transistor

2C3960 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
ConfigurationSingle
Minimum DC current gain (hFE)25
Polarity/channel typeNPN
Base Number Matches1
Data Sheet No. 2C3960
Chip Type 2C3960
Geometry 0003
Polarity NPN
Generic Packaged Part:
2N3960
Chip type
2C3960
by Semicoa Semi-
conductors provides performance
similar to these devices.
Part Numbers:
Product Summary:
APPLICATIONS:
Designed for high-speed current-mode
logic switching.
Features:
2N3960,
2N3960UB, SD3960F, SQ3960,
SQ3960F
Mechanical Specifications
Metallization
Bonding Pad Size
Die Thickness
Chip Area
Top Surface
Top
Backside
Emitter
Base
Al - 15 kÅ min.
Au - 6.5 kÅ nom.
2.7 mils x 2.7 mils
2.7 mils x 2.7 mils
8 mils nominal
16 mils x 16 mils
Silox Passivated
Electrical Characteristics
Parameter
T
A
= 25
o
C
Test conditions
Min
Max
Unit
BV
CEO
I
C
= 10.0 mA
12
---
V dc
BV
CBO
I
C
= 10 µA
20
---
V dc
BV
EBO
I
E
= 10.0 mA
4.5
---
V dc
I
CEX
V
CE
= 10 V, V
EB
= 2.0 V
---
5.0
nA
h
FE1
I
C
= 1.0 mA dc, V
CE
= 1.0 V
25
---
---
h
FE2
I
C
= 10 mA dc, V
CE
= 1.0 V
40
400
---
h
FE3
I
C
= 30 mA dc, V
CE
= 1.0 V
25
---
---
V
CE(sat)
I
C
= 30 mA dc, I
B
= 3.0 mA
---
0.3
V dc
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 µs, duty cycle less than 2%.

2C3960 Related Products

2C3960
Description Transistor
Reach Compliance Code compli
Configuration Single
Minimum DC current gain (hFE) 25
Polarity/channel type NPN
Base Number Matches 1
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