WILLAS
SOT-363 Plastic-Encapsulate Diode
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
PACKAGE
FM120-M
THRU
BAW56DW
FM1200-M
Pb Free Product
Features
SWITCHING DIODE
Package outline
SOT-363
SOD-123H
•
Batch process design, excellent power dissipation offers
better
FEATURES
reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
Fast Switching Speed
optimize board space.
Low power loss, high efficiency.
•
Ultra-Small Surface Mount Package
•
High current capability, low forward voltage drop.
High surge capability.
•
For General Purpose Switching Applications
Guardring for overvoltage protection.
•
High Conductance
•
Ultra high-speed switching.
Pb-Free package is available
•
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts
for packing code
standards
•
RoHS product
meet environmental
suffix ”G”
of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
RoHS product for packing code suffix "G"
Moisture Sensitivity Level 1
MIL-STD-19500 /228
Halogen free product for packing code suffix “H”
Halogen free product for packing code suffix "H"
0.040(1.0)
0.024(0.6)
MAKING: KJC
•
Epoxy : UL94-V0 rated flame
Maximum Ratings @T
A
=25℃
retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Parameter
Method 2026
Peak Repetitive Peak reverse voltage
•
Polarity : Indicated by cathode band
Working Peak Reverse Voltage
DC Blocking
Voltage
•
Mounting Position : Any
Mechanical data
0.031(0.8) Typ.
0.031(0.8) Typ.
Symbol
V
RRM
V
RWM
V
R
I
FM
Limits
Unit
Dimensions in
75
inches and (millimeters)
V
•
Weight : Approximated
Forward Continuous Current
0.011 gram
Ratings at 25℃ ambient temperature unless otherwise
Non-Repetitive Peak Forward Surge Current
specified.
@ t = 1.0µs
300
150
2
1
200
mA
mA
A
mW
I
O
Average Rectified Output
RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM
Current
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
@ t = 1.0s
I
FSM
P
Power Dissipation
RATINGS
Marking Code
Thermal Resistance
D
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
Operating Junction Temperature
Maximum RMS Voltage
Maximum DC Blocking Voltage
Storage temperature
Maximum Recurrent Peak Reverse Voltage
Junction to Ambient Air
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
20
13
30
21
30
14
40
28
40
R
θJA
15
50
16
625
18
60
80
42
T
J
35
50
T
STG
150
10
℃/W
100
70
℃
100
℃
115
150
105
150
120
200
140
200
Vol
56
Vol
60
-55-150
80
1.0
30
Vol
Maximum Average Forward Rectified Current
Am
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
MAX
UNIT
V
Am
Parameter
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Symbol
R
ΘJA
C
J
Test
conditions
MIN
40
120
℃/W
PF
Reverse breakdown voltage
Operating Temperature Range
Storage Temperature Range
V
T
J
(BR) R
TSTG
-55 to +125
I
R
= 2.5µA
75
-55 to +150
℃
Reverse voltage leakage current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.025
V
R
=20V
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
I
R
V
I
R
V
R
=75V
I
F
=1mA
0.50
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0, f=1MHz
I
F
=I
R
=10mA,I
rr
=0.1×I
R,
R
L
=100Ω
0.70
-
65
to +175
2.5
0.85
715
℃
µA
0.9
0.92
Vol
Forward voltage
0.5
10
@T A=125℃
F
NOTES:
855
1000
1250
2
4
mV
mAm
1-
Junction capacitance
Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
C
T
t
rr
pF
nS
2- Thermal Resistance From Junction to Ambient
Reveres recovery time
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS
SOT-363 Plastic-Encapsulate Diode
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
THRU
BAW56DW
FM1200-M
Pb Free Product
Features
Typical Characteristics
outline
Package
SOD-123H
SOD-123
PACKAGE
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vo
Vo
Vo
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
P
-
65
to +175
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Vo
I
R
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
SOT-363 Plastic-Encapsulate Diode
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
FM120-M
BAW56DW
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
Outline Drawing
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.054(1.35)
.045(1.15)
.087(2.20)
•
Epoxy : UL94-V0 rated flame retardant
.071(1.80)
Mechanical data
.004(0.10)MIN.
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-363
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum RMS Voltage
.030(0.75)
.021(0.55)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
.010(0.25)
18
10
.003(0.08)
80
56
80
100
70
100
.096(2.45)
.071(1.80)
115
150
105
150
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
120
200
140
200
Vo
.056(1.40)
Maximum DC Blocking Voltage
.047(1.20)
Maximum Average Forward Rectified Current
Vo
Vo
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Storage Temperature Range
.004(0.10)MAX.
Operating Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
-55 to +125
40
120
-55 to +150
℃
P
-
65
to +175
℃
℃
.043(1.10)
.032(0.80)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
0.50
0.70
0.5
10
0.85
0.9
0.92
Vo
NOTES:
.016(0.40)
I
R
@T A=125℃
.004(0.10)
mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
Rev.D
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
2012-1
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