BC846 - BC850 — NPN Epitaxial Silicon Transistor
April 2011
BC846 - BC850
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
•
Complement to BC856 ... BC860
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
Symbol
V
CBO
Collector-Base Voltage
T
a
= 25°C unless otherwise noted
Parameter
Value
Units
: BC846
80
V
: BC847/850
50
V
: BC848/849
30
V
Collector-Emitter Voltage : BC846
65
V
V
CEO
: BC847/850
45
V
: BC848/849
30
V
Emitter-Base Voltage
: BC846/847
6
V
V
EBO
: BC848/849/850
5
V
Collector Current (DC)
100
mA
I
C
Collector Power Dissipation
310
mW
P
C
Junction Temperature
150
°C
T
J
Storage Temperature
-65 to 150
°C
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
Symbol
Parameter
T
a
= 25°C unless otherwise noted
Test Condition
Min.
110
Typ.
Max.
15
800
250
600
Units
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
dB
dB
dB
I
CBO
Collector Cut-off Current
V
CB
=30V, I
E
=0
DC Current Gain
V
CE
=5V, I
C
=2mA
h
FE
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
V
BE
(sat) Collector-Base Saturation Voltage
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
BE
(on) Base-Emitter On Voltage
V
CE
=5V, I
C
=10mA
Current Gain Bandwidth Product
V
CE
=5V, I
C
=10mA, f=100MHz
f
T
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
C
ob
Input Capacitance
V
EB
=0.5V, I
C
=0, f=1MHz
C
ib
NF
Noise Figure
: BC846/847/848
V
CE
= 5V, I
C
= 200μA
R
G
=2KΩ, f=1KHz
: BC849/850
: BC849
V
CE
= 5V, I
C
= 200μA
R
G
=2KΩ, f=30~15000Hz
: BC850
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
© 2011 Fairchild Semiconductor Corporation
BC846 - BC850 Rev. B1
1
580
90
200
700
900
660
300
3.5
9
2
1.2
1.4
1.4
700
720
6
10
4
4
3
www.fairchildsemi.com
BC846 - BC850 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
100
10000
I
C
[mA], COLLECTOR CURRENT
80
I
B
= 400
μ
A
I
B
= 350
μ
A
V
CE
= 5V
h
FE
, DC CURRENT GAIN
I
B
= 300
μ
A
60
I
B
= 250
μ
A
I
B
= 200
μ
A
1000
40
I
B
= 150
μ
A
I
B
= 100
μ
A
100
20
I
B
= 50
μ
A
0
0
4
8
12
16
20
10
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10000
100
I
C
= 10 I
B
1000
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
V
CE
= 2V
10
100
1
V
CE
(sat)
10
1
10
100
1000
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Figure 4. Base-Emitter On Voltage
100
1000
f=1MHz
V
CE
=5V
C
ob
[pF], CAPACITANCE
10
100
1
10
0.1
1
10
100
1000
1
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
© 2011 Fairchild Semiconductor Corporation
BC846 - BC850 Rev. B1
3
www.fairchildsemi.com
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First Production
Full Production
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Rev. I53
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