SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
L
2N5551S
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
L
FEATURES
A
: V
CBO
=180V, V
CEO
=160V
・Low
Leakage Current.
: I
CBO
=50nA(Max.) V
CB
=120V
・Low
Saturation Voltage
: V
CE(sat)
=0.2V(Max.) I
C
=50mA, I
B
=5mA
・Low
Noise : NF=8dB (Max.)
・Suffix
U
: Qualified to AEC-Q101.
Q
G
・High
Collector Breakdwon Voltage
2
H
3
1
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
C
N
M
ex) 2N5551S-RTK/PU
1. EMITTER
2. BASE
3. COLLECTOR
℃
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
RATING
180
160
6
600
100
350
150
-55½150
UNIT
V
V
V
mA
mA
mW
℃
℃
Type Name
Marking
K
SOT-23
J
D
Lot No.
ZF
Note : * Package Mounted On 99.5% Alumina 10×8×0.6㎜)
2019. 01. 08
Revision No : 4
1/3
2N5551S
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown Voltage
*
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
(1)
DC Current Gain
*
h
FE
(2)
h
FE
(3)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Transition Frequency
Collector Output Capacitance
Input Capacitance
Small-Signal Current Gain
Noise Figure
*
*
V
CE(sat)
1
V
CE(sat)
2
V
BE(sat)
1
V
BE(sat)
2
f
T
C
ob
C
ib
h
fe
NF
TEST CONDITION
V
CB
=120V, I
E
=0
V
CB
=120V, I
E
=0, Ta=100℃
V
EB
=4V, I
C
=0
I
C
=0.1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μ I
C
=0
A,
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=10V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
BE
=0.5V, I
C
=0, f=1MHz
V
CE
=10V, I
C
=1mA, f=1kHz
V
CE
=5V, I
C
=250μ
A
Rg=1kΩ, f=10Hz½15.7kHz
* Pulse Test : Pulse Width≦300μ Duty Cycle≦2%.
S,
MIN.
-
-
-
180
160
6
80
80
30
-
-
-
-
100
-
-
50
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
50
50
50
-
-
-
-
250
-
0.15
V
0.2
1.0
V
1.0
300
6
20
200
8
dB
MHz
pF
pF
UNIT
nA
μ
A
nA
V
V
V
2019. 01. 08
Revision No : 4
2/3
2N5551S
I
C
- V
CE
COLLECTOR CURRENT I
C
(mA)
140
120
100
80
60
40
20
0
0
1
2
I
B
=0.5mA
I
B
=10mA
I
B
=6mA
I
B
=4mA
I
B
=2mA
h
FE
- I
C
1K
Ta=25 C
Ta=125 C
V
CE
= 5V
DC CURRENT GAIN h
FE
100
Ta=-25 C
Ta=25 C
10
3
4
5
1
0.01
0.1
1
10
100
1000
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
V
BE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
10
I
C
/I
B
=10
V
CE(sat)
- I
C
1
0.5
0.3
Ta=125 C
I
C
/I
B
=10
Ta=-25 C
1
0.1
0.05
0.03
0.01
0.01
Ta=25 C
Ta=-25 C
Ta=125 C
Ta=25 C
0.1
0.01
0.1
1
10
100
1K
0.1
1
10
100
1K
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
SAFE OPERATING AREA
10
COLLECTOR CURRENT I
C
(A)
1
CONTINUOUS
I
C
MAX.(PULSED) *
*1
m
S
0m
S
*1
0.1
DC
OP
ER
AT
IO
N
0.001
PLUSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
0.1
1
10
100
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2019. 01. 08
Revision No : 4
V
CEO
MAX
0.01
* SINGLE NONREPETITIVE
Ta
=2
5
C
500
3/3
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