2N5551HR
Hi-Rel NPN bipolar transistor 160 V, 0.5 A
Datasheet — production data
Features
BV
CEO
I
C
(max)
H
FE
at 5 V - 10 mA
Operating temperature range
160 V
0.5 A
> 80
-65 °C to +200 °C
TO-18
3
1
2
3
1
2
LCC-3
■
■
■
■
■
Linear gain characteristics
ESCC qualified
European preferred part list - EPPL
100 krad low dose rate
Hermetic packages
Figure 1.
Internal schematic diagram
TO-39
Description
The 2N5551HR is a silicon planar epitaxial NPN
transistor in TO-18, TO-39 and LCC-3 packages.
It is specifically designed for aerospace Hi-Rel
applications and ESCC qualified according to the
5201-019 specification. In case of conflict
between this datasheet and ESCC detailed
specification, the latter prevails.
Table 1.
Device summary
ESCC Part
number
-
5201/019/08 or 09
-
5201/019/04 or 05
5201/019/05
-
5201/019/01 or 02
5201/019/06 or 07
Qual. Level
Eng. Model
ESCC Flight
Eng. Model
ESCC Flight
ESCC Flight 100 krad
Eng. Model
ESCC Flight
ESCC Flight
Rad.
level
Packages
LCC-3UB
LCC-3UB
LCC-3
LCC-3
LCC-3
TO-18
TO-18
TO-39
Lead Finish
Gold
Gold / Solder Dip
(1)
Gold
Gold / Solder Dip
(1)
Solder Dip
Gold
Gold / Solder Dip
(1)
Gold / Solder Dip
(1)
Mass
(g)
0.06
0.06
0.06
0.06
0.06
0.40
0.40
1.20
EPPL
-
-
-
Y
Y
-
-
-
Order codes
2N5551UB1
2N5551UB
SOC5551
SOC5551HRB
SOC5551SW
2N5551/T1
2N5551HR
2N5551SHR
1. Depending ESCC part number mentioned on the purchase order.
November 2012
This is information on a product in full production.
Doc ID 16935 Rev 4
1/11
www.st.com
11
Electrical ratings
2N5551HR
1
Electrical ratings
Table 2.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Absolute maximum ratings
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
for 2N5551HR
for SOC5551HRB
Total dissipation at T
amb
≤
25 °C
for 2N5551HR
for SOC5551HRB
for SOC5551HRB
(1)
Total dissipation at T
c
≤
25 °C
for 2N5551HR
Storage temperature
Max. operating junction temperature
Value
180
160
6
0.6
0.5
0.36
0.36
0.58
1.2
-65 to 200
200
Unit
V
V
V
A
A
W
W
W
W
°C
°C
P
TOT
T
STG
T
J
1. When mounted on a 8 x 10 x 0.6 mm ceramic substrate.
Table 3.
Symbol
R
thJC
R
thJA
Thermal data for through-hole package
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
__
__
max
max
Value
146
486
Unit
°C/W
°C/W
Table 4.
Symbol
R
thJA
Thermal data for SMD package
Parameter
Thermal resistance junction-ambient
__
max
max
Value
486
302
Unit
°C/W
°C/W
Thermal resistance junction-ambient
(1)
__
1. When mounted on a 8 x 10 x 0.6 mm ceramic substrate.
2/11
Doc ID 16935 Rev 4
2N5551HR
Electrical characteristics
2
Electrical characteristics
T
case
= 25 °C unless otherwise specified.
Table 5.
Symbol
I
CBO
I
EBO
Electrical characteristics
Parameter
Collector-base cut-off
current (I
E
= 0)
Emitter-base cut-off
current (I
C
= 0)
Collector-base
breakdown voltage
(I
E
= 0)
Collector-emitter
breakdown voltage
(I
B
= 0)
Emitter-base
breakdown voltage
(I
C
= 0)
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Test conditions
V
CB
= 120 V
V
CB
= 120 V
V
EB
= 4 V
Min.
Typ.
-
-
Max.
50
50
50
Unit
nA
µA
nA
T
C
= 150 °C
V
(BR)CBO
I
C
= 100 µA
180
-
V
V
(BR)CEO
(1)
I
C
= 1 mA
160
-
V
V
(BR)EBO
I
E
= 10 µA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 10 mA
T
amb
= - 55 °C
V
CE
= 10 V
f = 1 kHz
V
CE
= 10 V
f > 100 MHz
V
CB
= 10 V
V
EB
= 5 V
I
B
= 1 mA
I
B
= 5 mA
I
B
= 1 mA
I
B
= 5 mA
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
I
C
= 1 mA
I
C
= 10 mA
6
-
0.15
0.2
1
1
250
-
V
V
V
V
V
V
CE(sat) (1)
V
BE(sat) (1)
-
-
80
80
30
20
h
FE (1)
DC current gain
h
fe
h
fe
C
obo
C
ebo
Small signal current
gain
Small signal current
gain
Output capacitance
(I
E
= 0)
Emitter-base
capacitance (I
C
= 0)
50
1
-
-
-
-
200
f = 1 MHz
f = 1 MHz
6
20
pF
pF
1. Pulsed duration = 300 µs, duty cycle
≤
1.5%
Doc ID 16935 Rev 4
3/11
Electrical characteristics
2N5551HR
2.1
Figure 2.
1000
Electrical characteristics (curves)
h
FE
@ V
CE
= 5 V
AM16336v1
T
J
=-55°C
T
J
=-40°C
T
J
=25°C
T
J
=110°C
T
J
=125°C
Figure 3.
1
V
CE(sat)
@ h
FE
=10
AM16337v1
T
J
=-55°C
T
J
=-40°C
T
J
=25°C
T
J
=110°C
T
J
=125°C
100
0.1
10
0.001
I
C
(A)
0.01
0.1
0.01
0.001
I
C
(A)
0.01
0.1
Figure 4.
1
0.9
0.8
0.7
0.6
0.5
0.4
0.001
V
BE(sat)
@ h
FE
=10
AM16338v1
T
J
=-55°C
T
J
=-40°C
T
J
=25°C
T
J
=110°C
T
J
=125°C
0.01
I
C
(A)
0.1
4/11
Doc ID 16935 Rev 4
2N5551HR
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Doc ID 16935 Rev 4
5/11
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