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BC847BW

Description
100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size407KB,2 Pages
ManufacturerCentral Semiconductor
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BC847BW Overview

100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC847BW Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionPLASTIC, SUPERMINI-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.275 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC846W SERIES
BC847W SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC846W and
BC847W Series types are NPN Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERmini
TM
surface mount package,
designed for general purpose switching and amplifier
applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-323 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCBO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(ON)
VBE(ON)
Cob
fT
NF
Note: Reverse Lead Codes Available, Add “R” to
the end of the Part # and Marking Code.
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
Θ
JA
BC847W
50
45
BC846W
80
65
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
5.0
100
200
200
275
-65 to +150
455
CHARACTERISTICS:
(TA=25°C unless
TEST CONDITIONS
VCB=30V
VCB=30V, TA=150°C
VEB=5.0V
IC=10μA (BC847W)
IC=10μA (BC846W)
IC=10mA (BC847W)
IC=10mA (BC846W)
IE=10μA
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
IC=2.0mA, VCE=5.0V
IC=10mA, VCE=5.0V
VCB=10V, IE=0, f=1.0MHz
VCE=5.0V, IC=10mA, f=100MHz
VCE=5.0V, IC=200μA,
RS=2.0KΩ, f=1.0KHz, BW=200Hz
otherwise noted)
MIN
MAX
15
5.0
100
50
80
45
65
5.0
0.25
0.60
0.70
0.77
3.0
0.58
100
10
BC846BW
BC847BW
MIN
MAX
200
450
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
pF
MHz
dB
hFE
VCE=5.0V, IC=2.0mA
BC846AW
BC847AW
MIN
MAX
110
220
BC847CW
MIN
MAX
420
800
R1 (20-November 2009)

BC847BW Related Products

BC847BW BC847AW BC847CW BC846AW BC846BW BC846W
Description 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
surface mount YES YES YES YES YES Yes
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead -
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible -
Maker Central Semiconductor Central Semiconductor Central Semiconductor - Central Semiconductor -
package instruction PLASTIC, SUPERMINI-3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Contacts 3 3 3 3 3 -
Reach Compliance Code _compli _compli not_compliant _compli _compli -
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 -
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A -
Collector-emitter maximum voltage 45 V 45 V 45 V 65 V 65 V -
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE -
Minimum DC current gain (hFE) 200 110 420 110 200 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 -
JESD-609 code e0 e0 e0 e0 e0 -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type NPN NPN NPN NPN NPN -
Maximum power dissipation(Abs) 0.275 W 0.275 W 0.275 W 0.275 W 0.275 W -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz -
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