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BZV55C33BSB

Description
Zener Diode, 33V V(Z), 2.51%, 0.4W, Silicon, Unidirectional, ROHS COMPLIANT, HERMETIC SEALED, GLASS, LL-34, MINIMELF-2
CategoryDiscrete semiconductor    diode   
File Size183KB,5 Pages
ManufacturerRectron
Environmental Compliance
Download Datasheet Parametric View All

BZV55C33BSB Overview

Zener Diode, 33V V(Z), 2.51%, 0.4W, Silicon, Unidirectional, ROHS COMPLIANT, HERMETIC SEALED, GLASS, LL-34, MINIMELF-2

BZV55C33BSB Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-R2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)265
polarityUNIDIRECTIONAL
Maximum power dissipation0.4 W
Certification statusNot Qualified
Nominal reference voltage33 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance2.51%
Working test current5 mA
BZV55C-BS
SERIES
4.7V to 36V
SILICON PLANAR ZENER DIODE
FEATURES
* Zener Voltage Range 4.7 to 36 Volts
* LL-34 (Mini-MELF) Package
* Hermetically Sealed, Glass Silicon Diodes
SOD-80C
.059(1.50)
.056(1.42)
.112(0.30)
R.004(0.10)
.112(0.30)
.057(1.45)
.053(1.35)
.146(3.70)
.130(3.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25
o
C unless otherwise noted )
RATINGS
Average Forward Current (averaged Over any 20 ms period)
Repetitive Peak Forward Current
Total Power Dissipation up to T
flange
=50
O
C
Up to Ta=50
O
C and Mounted on a Ceramic Substrate of 10mm x 10
mm x 0.6mm
Non-Reperitive Peak Reverse Power Dissipation t=100us,T
J
=150
O
C
Storage Temperature
Junction Temperature
THERMAL RESISTANCE
From Junction to tie-point(flanges)
Form Junction to Ambient when Mounted on a Ceramic Substrate of
10mm x 10mm x 0.6mm
Rth(j-tp)
Rth(j-a)
0.30
0.38
K/mW
K/mW
VD 2007-11
SYMBOL
IF(av)
IFRM
Ptot
Ptot
P
ZSM
Tstg
T
J
VALUE
250
250
500
400
30
-65 to +200
200
UNITS
mA
mA
mW
mW
W
O
C
C
O
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