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PDTC113ZK

Description
PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-346
CategoryDiscrete semiconductor    The transistor   
File Size79KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PDTC113ZK Overview

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-346

PDTC113ZK Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)35
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
surface mountYES
Transistor component materialsSILICON
PDTC113Z series
NPN resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ
Rev. 03 — 11 April 2005
Objective data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistors (RET) family.
Table 1:
Product overview
Package
Philips
PDTC113ZE
PDTC113ZK
PDTC113ZM
PDTC113ZS
[1]
PDTC113ZT
PDTC113ZU
[1]
Type number
PNP complement
JEITA
SC-75
SC-59A
SC-101
SC-43A
-
SC-70
JEDEC
-
TO-236
-
TO-92
TO-236AB
-
PDTA113ZE
PDTA113ZK
PDTA113ZM
PDTA113ZS
PDTA113ZT
PDTA113ZU
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
s
Built-in bias resistors
s
Simplifies circuit design
s
Reduces component count
s
Reduces pick and place costs
1.3 Applications
s
General-purpose switching and
amplification
s
Inverter and interface circuits
s
Circuit drivers
1.4 Quick reference data
Table 2:
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
0.7
8
Typ
-
-
1
10
Max
50
100
1.3
12
Unit
V
mA
kΩ

PDTC113ZK Related Products

PDTC113ZK
Description PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-346
Is it Rohs certified? conform to
Maker NXP
Reach Compliance Code compliant
Maximum collector current (IC) 0.1 A
Minimum DC current gain (hFE) 35
Number of components 1
Polarity/channel type NPN
Maximum power dissipation(Abs) 0.25 W
surface mount YES
Transistor component materials SILICON
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