Preliminary
Datasheet
BCR10CS-12LB
Triac
Medium Power Use
Features
I
T (RMS)
: 10 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA (20 mA)
Note6
R07DS0224EJ0400
(Previous: REJ03G0469-0300)
Rev.4.00
Dec 14, 2010
The product guaranteed maximum junction
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
RENESAS Package code: P
: PRSS0004AB-A
(Package name: TO-220S
220S)
4
1
2
L
E
O
3
1
2
KG
P
2, 4
3
1
3
1.
2.
3.
4.
T
1
Terminal
T
2
Terminal
Gate Terminal
T
2
Terminal
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid
state relay, copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Symbol
V
DRM
V
DSM
Ratings
10
100
41.6
5
0.5
10
2
– 40 to +150
– 40 to +150
1.3
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Voltage class
12
600
720
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 128C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Unit
V
V
Typical value
R07DS0224EJ0400 Rev.4.00
Dec 14, 2010
Page 1 of 8
BCR10CS-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
30
Note6
30
Note6
30
Note6
—
1.8
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 15 A,
Instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C/150C, V
D
= 1/2 V
DRM
Junction to case
Note3 Note4
Tj = 125C/150C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note5
commutating voltage
Notes: 2.
3.
4.
5.
6.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured on the T
2
tab.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (I
GT
20 mA) is also available. (I
GT
item: 1)
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 5.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0224EJ0400 Rev.4.00
Dec 14, 2010
Page 2 of 8
BCR10CS-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
100
7
5
Rated Surge On-State Current
Surge On-State Current (A)
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
3
2
Tj = 150°C
10
1
7
5
3
2
Tj = 25°C
10
0
7
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
5
3
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
3
2
Typical Example
V
GM
= 10V
P
GM
= 5W
P
G(AV)
=
0.5W
I
GM
= 2A
Gate Voltage (V)
10
1
7
5
3
2
10
0
7
5
3
2
I
RGT I
, I
RGT III
V
GT
= 1.5V
10
2
7
5
3
2
I
FGT I
I
RGT I
I
FGT I
, I
RGT III
10
–1
7
V
GD
= 0.1V
5
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
10
2
2 3 5 7 10
3
2
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
Transient Thermal Impedance (°C/W)
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0224EJ0400 Rev.4.00
Dec 14, 2010
Page 3 of 8
BCR10CS-12LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
140
Maximum On-State Power Dissipation
32
On-State Power Dissipation (W)
28
24
360° Conduction
Resistive,
20
inductive loads
16
12
8
4
0
0
2
4
6
8
10
12
14
16
Case Temperature (°C)
120
Curves apply
regardless of
100
conduction angle
80
60
40
360° Conduction
20
Resistive,
inductive loads
0
0
2
4
6
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
Allowable Ambient Temperature vs.
RMS On-State Current
Natural convection
No fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Ambient Temperature (°C)
120
100
80
100
×
100
×
t2.3
60
×
60
×
t2.3
Ambient Temperature (°C)
140
120
×
120
×
t2.3
140
120
100
80
60
40
20
0
0
All fins are black
60
painted aluminum
and greased
40
Curves apply regardless
of conduction angle
20
Resistive, inductive loads
Natural convection
0
0
2
6
4
8 10
12
14
16
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Typical Example
Typical Example
10
5
10
4
10
3
10
2
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS0224EJ0400 Rev.4.00
Dec 14, 2010
Page 4 of 8
BCR10CS-12LB
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
Preliminary
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Latching Current (mA)
Distribution
T
2
+, G–
Typical Example
10
0
–40
T
2
+, G+
Typical Example
T
2
–, G–
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
160
140
120
100
80
60
40
20
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Typical Example
Tj = 125°C
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Typical Example
Tj = 150°C
III Quadrant
III Quadrant
I Quadrant
I Quadrant
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
7
5
3
2
10
1
7
5
3
2
10
0
7
0
10
2 3
III Quadrant
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Commutation Characteristics (Tj=150°C)
7
5
3
2
10
1
7
5
3
2
Minimum
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
Typical Example
Tj = 150°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
Minimum
Characteristics
Value
I Quadrant
I Quadrant
III Quadrant
10
0
Characteristics
Value
5 7 10
1
2 3
5 7 10
2
7
0
10
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0224EJ0400 Rev.4.00
Dec 14, 2010
Page 5 of 8
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