TF6A60
Standard Triac
Symbol
○
2.T2
V
DRM
= 600V
I
T(RMS)
= 6 A
TO-220F
▼
▲
○
3.Gate
I
TSM
= 63A
1
2
3
1.T1
○
Features
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 6 A )
◆
High Commutation dv/dt
◆
General Description
This device is fully isolated p ackage suitable for AC switching app lication, phase control application
such as fan speed and temperature modulation control, lighting control and static switching relay.
This device may substitute for BTA06-600, BTB06-600,
BCR5AM, BCR5PM-12L,
TM561S-L
series.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
G(AV)
I
GM
T
J
T
STG
( Tj = 25°C unless otherwise specified )
Condition
Since wave, 50 to 60Hz
T
j
=
125
°C,
Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp=10ms
T
j
= 125°C
T
j
= 125°C
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
Average Gate Power Dissipation
Peak Gate Current
Operating Junction Temperature
Storage Temperature
Ratings
600
6
.0
60/63
18
1
2
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
2
s
W
A
°C
°C
J u l y
, 2010. Rev.1
copyright @ Apollo Electron Co., Ltd. All rights reserved.
1/6
TF6A60
Electrical Characteristics
(Tj=25 °C unless otherwise specified)
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage
Holding Current
T
J
= 125 °C, V
D
=V
DRM
, R
L
=3.3kΩ
T
J
= 125 °C,
V
D
=2/3 V
DRM
Gate Trigger Voltage
V
D
=
12
V, R
L
=30
Ω
Gate Trigger Current
V
D
=12 V, R
L
=30
Ω
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
Tj = 125 °C
I
TM
= 8.5A,
tp=380㎲
Ratings
Min.
---
─
─
─
─
─
─
─
Typ.
---
─
─
─
─
─
─
─
Max.
1.0
1.55
25
25
25
1.5
1.5
1.5
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
I
-GT3
V
+GT1
V
-GT1
V
-GT3
V
GD
dv/dt
I
H
mA
V
mA
V
0.2
½
V
200
½
35
V/㎲
mA
I
T
=0.2A
2/6
TF6A60
Fig 1. Gate Characteristics
10
2
Fig 2. On-State Voltage
10
1
V
GM
(10V)
On-State Current [A]
Gate Voltage [V]
P
GM
(5W)
P
G(AV)
(1W)
25
℃
10
10
1
T
J
= 125 C
o
I
GM
(2A)
0
T
J
= 25 C
10
0
o
10
-1
V
GD
(0.2V)
1
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
10
9
130
Fig 4. On State Current vs.
Allowable Case Temperature
Allowable Case Temperature [
o
C]
Power Dissipation [W]
8
7
6
5
4
3
2
1
0
0
1
π
θ
360°
θ
2
π
θ
= 180
o
θ
= 150
θ
= 120
θ
= 90
o
o
o
o
o
120
θ
: Conduction Angle
θ
= 60
θ
= 30
110
π
θ
100
360°
θ
θ
= 30
2
π
o
o
o
o
o
θ
= 60
θ
= 90
θ
= 120
θ
: Conduction Angle
90
θ
= 150
o
θ
= 180
4
5
6
7
8
2
3
4
5
6
7
8
0
1
2
3
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
80
70
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
Surge On-State Current [A]
60
60Hz
40
30
20
10
0
0
10
V
GT
(25 C)
V
GT
(t C)
50
V
_
GT3
o
o
1
50Hz
V
V
+
GT1
_
GT1
10
1
10
2
0.1
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/6
TF6A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
I
I
+
GT1
_
GT1
Transient Thermal Impedance [ C/W]
I
GT
(25 C)
I
GT
(t C)
o
o
o
I
0.1
-50
_
GT3
1
0
50
100
o
150
10
-2
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
4/6
TF6A60
TO-220F Package Dimension
Sym bol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MIN
9.88
15.30
2.95
10.30
0.95
1.81
0.50
3.00
4.35
6.20
0.41
2.30
2.53
2.34
IN C H ES
TYP
10.08
15.50
3.00
10.50
1.08
1.84
0.70
3.20
4.45
6.40
0.51
2.50
2.73
2.54
MAX
10.28
15.70
3.05
10.70
1.20
1.87
0.90
3.40
4.55
6.60
0.61
2.70
2.93
2.74
MILLIMETER S
MIN
25.10
25.60
39.37
38.86
7.62
7.49
26.16
26.67
2.41
2.74
4.60
4.67
1.27
1.78
7.62
8.13
11.05
11.30
15.75
16.26
1.03
1.28
5.84
6.35
6.43
6.93
5.94
6.45
TYP
26.11
39.88
7.75
27.18
3.05
4.75
2.29
8.64
11.56
16.76
1.54
6.86
7.44
6.96
5/6
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