TRANSISTOR,BJT,NPN,15V V(BR)CEO,200MA I(C),TO-18
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | National Semiconductor（TI ） |
| Reach Compliance Code | compliant |
| Maximum collector current (IC) | 0.2 A |
| Configuration | Single |
| Minimum DC current gain (hFE) | 30 |
| JESD-609 code | e0 |
| Maximum operating temperature | 175 °C |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.3 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Nominal transition frequency (fT) | 350 MHz |
| BSY38 | BSX46-10 | BSX46-16 | BSY53 | BSY51 | BSX45-10 | BSX21 | BFY76 | BSY52 | BSX45-16 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | TRANSISTOR,BJT,NPN,15V V(BR)CEO,200MA I(C),TO-18 | TRANSISTOR,BJT,NPN,60V V(BR)CEO,1A I(C),TO-205AD | TRANSISTOR,BJT,NPN,60V V(BR)CEO,1A I(C),TO-205AD | TRANSISTOR,BJT,NPN,30V V(BR)CEO,750MA I(C),TO-39 | TRANSISTOR,BJT,NPN,25V V(BR)CEO,500MA I(C),TO-39 | TRANSISTOR,BJT,NPN,40V V(BR)CEO,1A I(C),TO-205AD | TRANSISTOR,BJT,NPN,80V V(BR)CEO,100MA I(C),TO-18 | TRANSISTOR,BJT,NPN,45V V(BR)CEO,50MA I(C),TO-18 | TRANSISTOR,BJT,NPN,25V V(BR)CEO,500MA I(C),TO-39 | TRANSISTOR,BJT,NPN,40V V(BR)CEO,1A I(C),TO-205AD |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| Maximum collector current (IC) | 0.2 A | 1 A | 1 A | 0.75 A | 0.5 A | 1 A | 0.1 A | 0.05 A | 0.5 A | 1 A |
| Configuration | Single | Single | Single | Single | Single | Single | Single | Single | Single | Single |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.3 W | 5 W | 5 W | 0.8 W | 0.8 W | 5 W | 0.3 W | 0.36 W | 0.8 W | 5 W |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Nominal transition frequency (fT) | 350 MHz | 50 MHz | 50 MHz | 100 MHz | 130 MHz | 50 MHz | 160 MHz | 55 MHz | 130 MHz | 50 MHz |
| Maker | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） | - | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） |
| Minimum DC current gain (hFE) | 30 | 63 | 100 | 40 | 40 | 63 | 60 | - | 100 | 100 |
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