BSH108T/R datasheet, PDF - EEWORLD Datasheet

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BSH108T/R: DescriptionSmall Signal Field-Effect Transistor; CategoryDiscrete semiconductor The transistor; File Size414KB，14 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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BSH108T/R Overview

Small Signal Field-Effect Transistor

BSH108T/R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Nexperia
Reach Compliance Code	compliant
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	1.9 A
Maximum drain-source on-resistance	0.14 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

BSH108T/R Preview

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename

Nexperia.

Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,

use

http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use

salesaddresses@nexperia.com

(email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via

salesaddresses@nexperia.com).

Thank you for your cooperation and

understanding,

Kind regards,

Team Nexperia

BSH108

N-channel enhancement mode ﬁeld-effect transistor

Rev. 02 — 25 October 2000

M3D088

Product speciﬁcation

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™

technology.

Product availability:

BSH108 in SOT23.

2. Features

TrenchMOS™ technology

Very fast switching

Logic level compatible

Subminiature surface mount package.

3. Applications

Battery management

High speed switch

Low power DC to DC converter.

4. Pinning information

Table 1:

Pinning - SOT23, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

source (s)

drain (d)

Top view

MSB003

MBB076

SOT23

TrenchMOS is a trademark of Royal Philips Electronics.

Philips Semiconductors

BSH108

N-channel enhancement mode ﬁeld-effect transistor

5. Quick reference data

Table 2:

tot

DSon

Quick reference data

Conditions

= 25 to 150

°C

= 25

°C;

= 5 V

= 25

°C

= 10 V; I

= 1 A

= 5 V; I

= 1 A

Typ

−

102

Max

1.9

0.83

150

120

140

Unit

°C

mΩ

drain-source voltage (DC)

drain current (DC)

total power dissipation

junction temperature

drain-source on-state resistance

Symbol Parameter

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

DGR

tot

stg

drain-source voltage (DC)

drain-gate voltage (DC)

gate-source voltage (DC)

drain current (DC)

peak drain current

total power dissipation

storage temperature

operating junction temperature

source (diode forward) current (DC) T

= 25

°C

peak source (diode forward) current T

= 25

°C;

pulsed; t

≤

µs

= 25

°C;

= 5 V;

Figure 2

and

= 100

°C;

= 5 V;

Figure 2

= 25

°C;

pulsed; t

≤

µs;

Figure 3

= 25

°C;

Figure 1

Conditions

= 25 to 150

°C

= 25 to 150

°C;

= 20 kΩ

Min

−

−65

−

Max

±20

1.9

1.2

7.5

0.83

+150

0.83

3.3

Unit

°C

Source-drain diode

9397 750 07652

Product speciﬁcation

Rev. 02 — 25 October 2000

2 of 13

Philips Semiconductors

BSH108

N-channel enhancement mode ﬁeld-effect transistor

03aa17

120

der

(%)

100

(%)

03aa25

120

Ider

100

125

Tsp

150

( C)

175

100

125

150 175

Tsp (oC)

tot

der

----------------------

100%

tot

(

25 C

)

≥

5 V

der

------------------

100%

(

25 C

)

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03aa80

(A)

RDSon = VDS/ ID

tp = 10

100

1 ms

10-1

10 ms

10-2

D.C.

100 ms

10-3

10-1

Tsp = 25oC

VDS (V)

102

= 25

°C;

is single pulse.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 07652

Product speciﬁcation

Rev. 02 — 25 October 2000

3 of 13

Philips Semiconductors

BSH108

N-channel enhancement mode ﬁeld-effect transistor

7. Thermal characteristics

Table 4:

th(j-sp)

th(j-a)

Thermal characteristics

Conditions

mounted on a printed circuit board;

minimum footprint

Value Unit

150

350

K/W

thermal resistance from junction to solder point mounted on a metal clad substrate;

Figure 4

thermal resistance from junction to ambient

Symbol Parameter

7.1 Transient thermal impedance

03aa79

103

Zth(j-sp)

(K/W)

102

= 0.5

0.2

0.1

0.05

0.02

single pulse

10-1

10-5

10-4

10-3

10-2

10-1

tp (s)

Mounted on a metal clad substrate.

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

9397 750 07652

Product speciﬁcation

Rev. 02 — 25 October 2000

4 of 13

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