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BSP107T/R

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size62KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BSP107T/R Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BSP107T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)0.2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.5 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)

BSP107T/R Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
BSP107
N-channel enhancement mode
vertical D-MOS transistor
Product specification
File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
FEATURES
Direct interface to C-MOS, TTL,
etc. due to low threshold voltage
High-speed switching
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope.
Intended for use as a line current
interruptor in telephone sets and for
applications in relay, high-speed and
line transformer driver switching.
PINNING - SOT223
PIN
1
2
3
4
gate
drain
source
drain
Fig.1 Simplified outline and symbol.
DESCRIPTION
1
Top view
2
3
MAM054
BSP107
QUICK REFERENCE DATA
SYMBOL
V
DS
V
GS(th)
I
D
R
DS(on)
PARAMETER
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
MAX.
200
2.4
200
28
V
V
mA
UNIT
handbook, halfpage
4
d
g
s
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
±V
GSO
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
drain current
drain current
total power dissipation
storage temperature range
operating junction temperature
open drain
DC
peak
up to T
amb
= 25
°C
CONDITIONS
MIN.
−65
MAX.
200
20
200
350
1.5
150
150
BSP107
UNIT
V
V
mA
mA
W
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-a
Note
1. Device mounted on an epoxy printed circuit board, 40 mm
×
40 mm
×
1.5 mm. Mounting pad for the drain lead
minimum 6 cm
2
.
PARAMETER
from junction to ambient (note 1)
VALUE
83.3
K/W
UNIT
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
DSS
I
DSX
±I
GSS
V
GS(th)
R
DS(on)
R
DS(on)
| Y
fs
|
C
iss
PARAMETER
drain-source breakdown voltage
drain-source leakage current
drain-source leakage current
gate-source leakage current
gate threshold voltage
drain-source on-resistance
drain-source on-resistance
transfer admittance
input capacitance
CONDITIONS
V
GS
= 0
I
D
= 10
µA
V
DS
= 130 V
V
GS
= 0
V
DS
= 70 V
V
GS
= 0.2 V
±
V
GS
= 15 V
V
DS
= 0
I
D
=1 mA
V
DS
= V
GS
I
D
= 20 mA
V
GS
= 2.6 V
I
D
= 150 mA
V
GS
= 10 V
I
D
= 250 mA
V
DS
= 15 V
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
MIN.
200
0.8
90
TYP.
20
14
180
BSP107
MAX.
30
1
10
2.4
28
V
UNIT
nA
µA
nA
V
mS
50
65
pF
C
oss
output capacitance
16
25
pF
C
rss
feedback capacitance
4
10
pF
Switching times (see Figs
2
and
3)
t
on
switching-on time
I
D
= 250 mA
V
DD
= 50 V
V
GS
= 0
10 V
I
D
= 250 mA
V
DD
= 50 V
V
GS
= 0
10 V
2
10
ns
t
off
switching-off time
5
20
ns
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP107
handbook, halfpage
VDD = 50 V
handbook, halfpage
90 %
INPUT
10 %
10 V
0V
ID
50
MSA631
90 %
OUTPUT
10 %
ton
toff
MBB692
Fig.2 Switching time test circuit.
Fig.3 Input and output waveforms.
handbook, halfpage
400
MDA700
handbook, halfpage
400
MDA701
ID
(mA)
300
VGS = 10 V
5V
4V
3V
200
ID
(mA)
300
200
100
100
0
0
4
8
12
VDS (V)
16
0
0
1
2
3
VGS (V)
4
Fig.4 Typical output characteristics; T
j
= 25° C.
Fig.5
Typical transfer characteristics; V
DS
= 10 V;
T
j
= 25° C.
April 1995
5
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