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BCW68G/E8

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size31KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

BCW68G/E8 Overview

Transistor

BCW68G/E8 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)0.8 A
ConfigurationSingle
Minimum DC current gain (hFE)50
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.33 W
surface mountYES
Terminal surfaceMatte Tin (Sn)

BCW68G/E8 Preview

BCW68G
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Mounting Pad Layout
Pin Configuration
1.
Base
2.
Emitter
3.
Collector
0.031 (0.8)
1
2
max. .004 (0.1)
0.035 (0.9)
0.079 (2.0)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Features
Dimensions in inches and (millimeters)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking Code:
DG
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Ratings at 25°C ambient temperature unless otherwise specified.
• PNP Silicon Epitaxial Planar Transistors
• Suited for low level, low noise, low frequency
applications in hybrid cicuits.
• Low Current, Low Voltage.
• As complementary type, BCW66G NPN
transistor is recommended.
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Base Current (DC)
Peak Base Current
Power Dissipation, T
S
= 79°C
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Soldering Point
Note:
(1) Mounted on FR-4 printed-ciruit board.
Symbol
–V
CEO
–V
CBO
–V
EBO
–I
C
–I
CM
–I
B
–I
BM
P
tot
T
j
T
STG
R
θJA
R
θJS
Value
45
60
5.0
800
1.0
100
200
330
150
–65 to +150
285
(1)
215
Unit
V
V
V
mA
A
mA
mA
mW
°C
°C
°C/W
°C/W
Document Number 88173
09-May-02
www.vishay.com
1
BCW68G
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
DC Current Gain
(1)
at V
CE
= 10V, I
C
= 100µA
at V
CE
= 1V, I
C
= 10mA
at V
CE
= 1V, I
C
= 100mA
at V
CE
= 2V, I
C
= 500mA
Collector-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
Collector-Emitter Breakdown Voltage
at I
C
= 10mA, I
B
= 0
Collector-Base Breakdown Voltage
at I
C
= 10µA, I
B
= 0
Emitter-Base Breakdown Voltage
at I
E
= 10µA, at I
C
= 0
Collector-Base Cut-off Current
at V
CB
= 45V, I
E
= 0
at V
CB
= 45V, I
E
= 0, T
A
= 150°C
Emitter-Base Cut-off Current
at V
EB
= 4V, I
C
= 0
Gain-Bandwidth Product
at V
CE
= 5V, I
C
= 50mA, f = 20MH
Z
Collector-Base Capacitance
at V
CB
= 10V, f = 1MHz
Emitter-Base Capacitance
at V
EB
= 0.5V, f = 1MHz
Note:
(1) Pulse test: t
300µs, D = 2%
(T
A
= 25°C unless otherwise noted)
Symbol
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
Min.
50
120
160
60
45
60
5
TYP.
250
Max.
400
0.3
0.7
1.25
2
Unit
V
V
V
V
V
V
V
I
CBO
I
CBO
I
EBO
f
T
C
CB
C
EB
200
6
60
20
20
20
nA
µA
nA
MHz
pF
pF
www.vishay.com
2
Document Number 88173
09-May-02
BCW68G
Vishay Semiconductors
formerly General Semiconductor
Fig. 1 - Switching Waveforms
10%
INPUT
90%
t
on
t
off
10%
OUTPUT
90%
10%
t
d
t
r
t
s
t
f
90%
Document Number 88173
09-May-02
www.vishay.com
3
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