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BC847BST/R

Description
TRANSISTOR 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size77KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BC847BST/R Overview

TRANSISTOR 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal

BC847BST/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-88
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz

BC847BST/R Preview

BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
Rev. 03 — 18 February 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
PNP/PNP complement: BC857BS.
1.2 Features
I
I
I
I
I
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 5 V; I
C
= 2 mA
Conditions
open base
Min
-
-
200
Typ
-
-
-
Max
45
100
450
Unit
V
mA
Per transistor
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
1
2
sym020
Simplified outline
6
5
4
Graphic symbol
6
5
4
TR2
TR1
3
3. Ordering information
Table 3.
Ordering information
Package
Name
BC847BS
SC-88
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
BC847BS
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
1F*
Type number
BC847BS_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 February 2009
2 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
Conditions
open emitter
open base
open collector
single pulse;
t
p
1 ms
single pulse;
t
p
1 ms
T
amb
25
°C
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
-
-
−65
−65
Max
50
45
5
100
200
200
220
250
300
400
150
+150
+150
Unit
V
V
V
mA
mA
mA
mW
mW
mW
mW
°C
°C
°C
Per transistor
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
25
°C
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
500
P
tot
(mW)
400
(2)
(1)
006aab419
300
200
100
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB, mounting pad for collector 1 cm
2
(2) FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curves SOT363 (SC-88)
BC847BS_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 February 2009
3 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
-
-
-
Max
568
500
230
Unit
K/W
K/W
K/W
Per transistor
-
-
-
-
416
313
K/W
K/W
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
10
0.01
0
006aab420
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC847BS_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 February 2009
4 of 12
NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
10
0.01
0
006aab421
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Per transistor
I
CBO
collector-base cut-off V
CB
= 30 V; I
E
= 0 A
current
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 2 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
[1]
Conditions
Min
-
-
-
200
-
-
-
580
-
-
100
Typ
-
-
-
-
-
-
755
655
-
11
-
Max
15
5
100
450
100
300
-
700
1.5
-
-
Unit
nA
µA
nA
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
[1]
mV
mV
mV
mV
pF
pF
MHz
base-emitter voltage I
C
= 2 mA; V
CE
= 5 V
collector capacitance I
E
= i
e
= 0 A; V
CB
= 10 V;
f = 1 MHz
emitter capacitance
transition frequency
Pulse test: t
p
300
µs; δ ≤
0.02.
I
C
= i
c
= 0 A; V
EB
= 0.5 V;
f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V;
f = 100 MHz
BC847BS_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 February 2009
5 of 12
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