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BF620T/R

Description
TRANSISTOR 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size72KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BF620T/R Overview

TRANSISTOR 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN, BIP General Purpose Small Signal

BF620T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-89
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.6 pF
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-243AA
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
VCEsat-Max0.6 V

BF620T/R Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BF620; BF622
NPN high-voltage transistors
Product data sheet
Supersedes data of 1999 Apr 21
2004 Dec 14
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
FEATURES
Low current (max. 50 mA)
High voltage (max. 300 V).
APPLICATIONS
Video output stages.
DESCRIPTION
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BF621 and BF623.
PINNING
PIN
1
2
3
emitter
collector
base
BF620; BF622
DESCRIPTION
2
MARKING
TYPE NUMBER
BF620
BF622
MARKING CODE
DC
DA
3
2
1
3
1
sym042
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BF620
BF622
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2004 Dec 14
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BF620
BF622
V
CEO
collector-emitter voltage
BF620
BF622
V
EBO
I
C
I
CM
I
BM
P
tot
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T
amb
25
°C
note 1
note 2
note 3
T
stg
T
j
T
amb
Notes
storage temperature
junction temperature
ambient temperature
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BF620; BF622
MIN.
MAX.
300
250
300
250
5
50
100
50
0.5
0.8
1.1
+150
150
+150
UNIT
V
V
V
V
V
mA
mA
mA
W
W
W
°C
°C
°C
−65
−65
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
2004 Dec 14
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
1600
P
tot
(mW)
1200
(1)
006aaa238
800
(2)
(3)
400
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB; 6 cm
2
mounting pad for collector.
(2) FR4 PCB; 1 cm
2
mounting pad for collector.
(3) FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Dec 14
4
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air
note 1
note 2
note 3
R
th(j-s)
Notes
thermal resistance from junction to
soldering point
BF620; BF622
VALUE
250
156
113
30
UNIT
K/W
K/W
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
10
3
Z
th
(K/W)
10
2
006aaa235
(1)
(3)
(2)
(4)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Mounted on FR4 printed-circuit board; standard footprint.
(1)
δ
= 1.
(2)
δ
= 0.75.
(3)
δ
= 0.5.
(4)
δ
= 0.33.
(5)
δ
= 0.2.
(6)
δ
= 0.1.
(7)
δ
= 0.05.
(8)
δ
= 0.02.
(9)
δ
= 0.01.
(10)
δ
= 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Dec 14
5

BF620T/R Related Products

BF620T/R BF622T/R
Description TRANSISTOR 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 50 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, TO-243, 3 PIN, BIP General Purpose Small Signal
Maker NXP NXP
Parts packaging code SOT-89 SOT-89
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.05 A 0.05 A
Collector-based maximum capacity 1.6 pF 1.6 pF
Collector-emitter maximum voltage 300 V 250 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 50 50
JEDEC-95 code TO-243AA TO-243AA
JESD-30 code R-PSSO-F3 R-PSSO-F3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 1 W 1.25 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) TIN
Terminal form FLAT FLAT
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 60 MHz 60 MHz
VCEsat-Max 0.6 V 0.6 V
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