MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Reverse Voltage
35 to 60 V
Forward Current
10 A
Schottky Barrier Rectifiers
ITO-220AC (MBRF10Hxx)
TO-220AC (MBR10Hxx)
0.415 (10.54) MAX.
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
PIN
1
0.160 (4.06)
0.140 (3.56)
2
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
CASE
0.405 (10.27)
0.383 (9.72)
0.185 (4.70)
0.175 (4.44)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.140 (3.56)
DIA.
0.130 (3.30)
0.131 (3.39)
DIA.
0.122 (3.08)
DIA.
0.055 (1.39)
0.045 (1.14)
0.600 (15.5)
0.580 (14.5)
0.603 (15.32)
0.573 (14.55)
1
0.676 (17.2)
0.646 (16.4)
0.350 (8.89)
0.330 (8.38)
PIN
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
PIN 1
0.110 (2.80)
0.100 (2.54)
PIN 1
PIN 2
PIN 2
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
TO-263AB (MBRB10Hxx)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.055 (1.40)
0.047 (1.19)
1
K
2
0.624 (15.85)
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
PIN 1
PIN 2
K - HEATSINK
Mounting Pad Layout TO-263AB
0.42
(10.66)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
0.33
(8.38)
0.63
(17.02)
Dimensions in inches
and (millimeters)
0.360 (9.14)
0.320 (8.13)
0.08
(2.032)
0.24
(6.096)
0.12
(3.05)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-0
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss
and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
• High temperature soldering guaranteed:
250 °C/10 seconds, 0.25" (6.35 mm) from case
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature
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Mechanical Data
Case:
JEDEC TO-220AC, ITO-220AC & TO-263AB molded
plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08 oz., 2.24 g
Document Number 88780
03-Mar-03
MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
(T
C
= 25 °C unless otherwise noted)
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
I
FRM
E
AS
I
FSM
I
RRM
E
RSM
V
C
dv/dt
T
J
T
STG
V
ISOL
MBR10H35 MBR10H45 MBR10H50 MBR10H60
Unit
V
V
V
A
A
mJ
A
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (See fig.1)
Peak repetitive forward current at T
C
= 150 °C
(20 KHz sq. wave)
Non-repetitive avalanche energy
at 25
°C,
I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Peak repetitive reverse current
at t
p
= 2.0
µs,
1 KH
Z
Peak non-repetitive reverse energy (8/20
µs
waveform)
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH
≤
30%
35
35
35
45
45
45
10
20
80
150
1.0
20
25
10,000
50
50
50
60
60
60
0.5
10
A
mJ
kV
V/µs
°C
°C
V
–65 to +175
–65 to +175
4500
(1)
3500
(2)
1500
(3)
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Maximum instantaneous
forward voltage
(4)
at
at
at
at
I
F
=
I
F
=
I
F
=
I
F
=
10
10
20
20
A
A
A
A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
=125 °C
T
J
= 25 °C
T
J
=125 °C
Symbol
MBR10H35, MBR10H45 MBR10H50, MBR10H60
Typ
–
0.49
–
0.62
–
4.0
Max
0.63
0.55
0.75
0.68
100
12
Typ
–
0.57
–
0.68
–
2.0
Max
0.71
0.61
0.85
0.71
100
12
Unit
V
F
V
µA
mA
Maximum instantaneous reverse current
at rated DC blocking voltage
(4)
I
R
Thermal Characteristics
(T
C
= 25 °C unless otherwise noted)
Parameter
Maximum thermal resistance
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
Symbol
R
θJC
MBR
2.0
MBRF
4.0
MBRB
2.0
Unit
°C/W
(3) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
(4) Pulse test: 300
µs
pulse width, 1% duty cycle
Ordering Information
Product
MBR10H35 – MBR10H60
MBRF10H35 – MBRF10H60
MBRB10H35 – MBRB10H60
Case
TO-220AC
ITO-220AC
TO-263AB
Package Code
45
45
31
45
81
Package Option
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
Document Number 88780
03-Mar-03
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2
MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
15
175
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Current (A)
150
MBR, MBRB
10
125
100
75
50
25
MBRF
5
0
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
Instantaneous Reverse Leakage Current
(mA)
100
100
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Forward Current (A)
10
10
T
J
= 150°C
1
T
J
= 125°C
0.1
0.01
MBR10H35 -- MBR10H45
MBR10H50 -- MBR10H60
T
J
= 25°C
0
20
40
60
80
100
T
J
= 150°C
1.0
T
J
= 25°C
T
J
= 125°C
0.1
MBR10H35 -- MBR10H45
MBR10H50 -- MBR10H60
0.01
0
0.1 0.2 0.3
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.001
0.0001
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
10000
MBR10H35 -- MBR10H45
MBR10H50 -- MBR10H60
Fig. 6 – Typical Transient
Thermal Impedance
10
Transeint Thermal Impedance (°C/W)
pF - Junction Capacitance
T
J
= 25°C
f = 1.0 MH
Z
Vsig = 50mVp-p
1000
1
100
0
1
10
100
0.1
0.01
0.1
1
10
Reverse Voltage (V)
Document Number 88780
03-Mar-03
t, Pulse Duration (sec.)
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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