BD242/A/B/C
BD242/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD241/A/B/C respectively
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
Parameter
Collector-Emitter Voltage
: BD242
: BD242A
: BD242B
: BD242C
Collector-Emitter Voltage
: BD242
: BD242A
: BD242B
: BD242C
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Value
- 45
- 60
- 80
- 100
- 55
- 70
- 90
- 115
-5
-3
-5
-1
40
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
V
CER
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD242
: BD242A
: BD242B
: BD242C
Collector Cut-off Current
Collector Cut-off Current
: BD242/A
: BD242B/C
: BD242
: BD242A
: BD242B
: BD242C
Test Condition
I
C
= - 30mA, I
B
= 0
Min.
- 45
- 60
- 80
- 100
- 0.3
- 0.3
- 0.2
- 0.2
- 0.2
- 0.2
-1
25
10
- 1.2
- 1.8
V
V
Typ.
Max.
Units
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
I
CEO
I
CES
V
CE
= - 30V, I
B
= 0
V
CE
= - 60V, I
B
= 0
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
I
C
= - 3A, I
B
= - 0.6A
V
CE
= - 4V, I
C
= - 3A
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
* Pulse Test: PW=300µs, duty Cycle≤2% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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Rev. E
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