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BD244C

Description
POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size82KB,3 Pages
ManufacturerCOMSET
Websitehttp://comset.halfin.com/
Environmental Compliance
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BD244C Overview

POWER TRANSISTOR

BD244C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCOMSET
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)65 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max1 V
BD244 – A – B – C
SILICON PNP POWER TRANSISTORS
The BD244 series are PNP power transistors in a TO-220 envelope.
They are intended for use in medium power linear and switching applications.
The complementary is BD243, A, B, C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Ratings
Collector-Emitter Voltage (I
B
= 0mA)
BD244
BD244A
BD244B
BD244C
BD244
BD244A
BD244B
BD244C
Value
-45
-60
-80
-100
-45
-60
-80
-100
-5.0
-6
-10
-2
65
150
-65 to +150
Unit
V
V
CBO
V
EBO
I
C
I
CM
I
B
P
T
T
J
T
S
Collector-Base Voltage (I
E
= 0mA)
Emitter-Base Voltage(I
C
= 0mA)
Collector Current
Collector Current-Peak
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
V
V
A
A
W
°C
T
C
= 25°
C
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Junction to Case Thermal Resistance
Junction to free air Thermal Resistance
Value
1.92
62.5
Unit
°C / W
°C / W
25/09/2012
COMSET SEMICONDUCTORS
1/3

BD244C Related Products

BD244C BD244 BD244A BD244B
Description POWER TRANSISTOR 6 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-220AB 6 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220 6 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
Is it Rohs certified? conform to conform to conform to conform to
Maker COMSET COMSET COMSET COMSET
package instruction FLANGE MOUNT, R-PSFM-T3 , FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow unknow unknow
Maximum collector current (IC) 6 A 8 A 6 A 6 A
Configuration SINGLE Single SINGLE SINGLE
Minimum DC current gain (hFE) 15 15 15 15
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 65 W 65 W 65 W 65 W
surface mount NO NO NO NO
Shell connection COLLECTOR - COLLECTOR COLLECTOR
Collector-emitter maximum voltage 100 V - 60 V 80 V
JEDEC-95 code TO-220AB - TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3
Number of components 1 - 1 1
Number of terminals 3 - 3 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON
VCEsat-Max 1 V - 1 V 1 V
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