2SA1602A datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SA1602A

2SA1602A: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, PNP, Silicon, SC-70, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size342KB，4 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

Download Datasheet Parametric View All

2SA1602A Overview

Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, PNP, Silicon, SC-70, 3 PIN

2SA1602A Parametric

Parameter Name	Attribute value
Parts packaging code	SC-70
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	50 V
Minimum DC current gain (hFE)	150
JESD-30 code	R-PDSO-G3
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

Preview

Download Datasheet

View All

〈

SMALL-SIGNAL TRANSISTOR

〉

2SA1602A

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE(Super mini type)

DESCRIPTION

2SA1602A is a super mini package resin sealed

silicon PNP epitaxial transistor,

It is designed for low frequency voltage application.

0.425

2.1

1.25 0.425

OUTLINE DRAWING

Unit

：½½

0.65

①

②

③

● Small collector to emitter saturation voltage.

VCE(sat)=-0.3V max

●Excellent linearity of DC forward gain.

●Super mini package for easy mounting

0.9

0.7

0.15

0.65

FEATURE

2.0

1.30

APPLICATION

For Hybrid IC,small type machine low frequency voltage

Amplify application.

JEITA

：SC-70

TERMINAL CONNECTER

①

：BASE

Ratings

-50

-6

-200

150

＋125

-55∼＋125

Unit

℃

MAXIMUM RATINGS

（Ta=25℃

）

Symbol

CBO

CEO

EBO

stg

Parameter

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

Collector dissipation

Junction temperature

Storage temperature

②

：EMITTER

③

：COLLECTOR

ELECTRICAL CHARACTERISTICS

（Ta=25℃）

Parameter

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain

C to E Saturation Vlotage

Gain bandwidth product

Collector output capacitance

Symbol

V(BR)

CEO

CBO

EBO

hFE

VCE(sat)

Cob

=-100μA ,R

=-50V,

=-6V,

0∼0.1

Test conditions

=∞

0.3

Limits

Min

-50

150

Typ

200

4.0

Max

-0.1

500

-0.3

MHz

Unit

μA

=0mA

=-1mA ※

=-0.1mA

=-100mA ,I

=-10mA

=-6V,

=-10mA

=0,f=1MHz

※ It shows hFE classification in below table.

）

Item

½ＦＥ Item

Ｅ

150 300

Ｆ

250 500

ISAHAYA

ELECTRONICS CORPORATION

Marketing division, Marketing planning department

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

Keep safety first in your circuit designs!

ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures

such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or

mishap.

Notes regarding these materials

These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the

customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging

ISAHAYA or third party.

ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,

originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.

All information contained in these materials, including product data, diagrams and charts, represent information on products

at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice

due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics

Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed

herein.

ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used

under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an

authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,

such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these

materials.

If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a

license from the Japanese government and cannot be imported into a country other than the approved destination. Any

diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is

prohibited.

Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these

materials or the products contained therein.

Jan.2003

Recommended Resources

Using a single transistor to build a smart battery charger circuit diagram

One of the thermostatic control circuits using operational amplifiers a

New fast charging I constant current source charging circuit

New micropower low dropout voltage regulator application circuit 03

Plant water content monitor circuit diagram

Charging circuit diagram with automatic circuit breaking

Embedded QQ group 46311065 welcomes everyone to join: Embedded QQ group 46311065 welcomes everyone to join, let us make progress together through discussion and practice....; maoyongf2008 MCU

How to use 28027 library functions: When I was learning ARM, I learned STM32, and I felt that the firmware library was very good. Now I switched to C2000, but I can't find the feeling I had when I learned 32. I spent a lot of time, but ...; 张元超 Microcontroller MCU

Log hook under WINCE: Recently, when I was working on a project, I wanted to use the mouse interception function under the WINCE system, that is, I wanted to use the journal hook under WINCE. The information said that WINC...; Kaituozhe1 Embedded System

In actual applications, how effective is ARM as a TCP server?: I heard some people say that ARM is not suitable for being a server. I wonder if it can be used as a TCP server in actual applications?...; 喜鹊王子 Microcontroller MCU

[EEWORLD 31st] Community star figures for October 2011 are announced!: Thank you all for your hard work for the forum. Here we select some friends who have made outstanding contributions in October!Outstanding Moderator of October Forum ID Responsible section Reason for ...; EEWORLD社区 Suggestions & Announcements

The latest developments in silicon carbide (SiC) and gallium nitride (GaN): Silicon carbide (SiC) and gallium nitride (GaN) are becoming increasingly popular in power electronics, especially in automotive applications, as production volumes scale and the need for better tools...; btty038 RF/Wirelessly

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components