High Performance Regulators for PCs
Nch FET Ultra LDO
for PC Chipsets
BD3506F,BD3506EFV
No.10030EAT30
Description
The BD3506F/EFV is an ultra-low dropout linear regulator for chipset that can achieve ultra-low voltage input to ultra-low
voltage output. By using N-MOS FET for built-in power transistor, the regulator can be used at ultra-low I/O voltage
difference up to voltage difference generated by ON resistor (Ron = 120 mΩ/100 mΩ). Because by reducing the I/O voltage
difference, large current (Iomax = 2.5A) output is achieved and conversion loss can be reduced, switching power supply can
be replaced. BD3506F/EFV does not need any choke coil, diode for rectification and power transistors which are required
for switching power supply, total cost of the set can be reduced and compact size can be achieved for the set. Using
external resistors, optional output from 0.65V to 2.5V can be set. In addition, since voltage output start-up time can be
adjusted by using the NRCS terminal, it is possible to meet the power supply sequence of the set.
Features
1) Built-in high-accuracy reference voltage circuit (0.65V±1%)
2) Built-in VCC low input maloperation prevention circuit (Vcc = 4.15V)
3) Reduced rush current by NRCS
4) Built-in ultra-low on-resistor (120/100 mΩ typ) Nch Power MOSFET (BD3506F/BD3506EFV)
5) Built-in current limiting circuit (2.5A min)
6) Built-in thermal shutdown circuit
7) Output variable type (0.65-2.5V)
8) Adoption of SOP8 package (BD3506F): 5.0 x 6.2 x 1.5 (mm)
9) Adoption of high power HTSSOP-B20 package (BD3506EFV): 5.0 x 6.4 x 1.0 (mm)
Applications
Mobile PC, desktop PC, LCD-TV, DVD, digital home appliances
●Line
up
Parameter
Ron
Output Current
Package
BD3506F
120mΩ
2.5A
SOP8
BD3506EFV
100mΩ
2.5A
HTSSOP-B20
●Absolute
Maximum Ratings(Ta=25℃)
Parameter
Input Voltage1
Input Voltage2
Enable Input Voltage
Power Dissipation1
Power Dissipation2
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Symbol
VCC
VIN
Ven
Pd1
Pd2
Topr
Tstg
Tjmax
Ratings
BD3506F
7 *
1
7*
7
560 *
690 *
2
3
1
BD3506EFV
7 *
1
7*
7
-
1000 *
4
1
Unit
V
V
V
mW
mW
℃
℃
℃
-10½+100
-55½+125
+150
-10½+100
-55½+125
+150
*1 However, not exceeding Pd.
*2 In the case of Ta≥25°C (no heat radiation board), derated at 4.48 mW/°C.
*3 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 5.52 mW/°C.
*4 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 8.00 mW/°C.
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© 2010 ROHM Co., Ltd. All rights reserved.
1/14
2010.05 - Rev.A
BD3506F,BD3506EFV
●Recommended
Operating Conditions(Ta=25℃)
Parameter
Input Voltage1
Input Voltage2
Output Voltage
Enable Input Voltage
Capacitor in NRCS pin
Symbol
VCC
VIN
Vo
Ven
CNRCS
Ratings
MIN
4.3
1.2
VFB
-0.3
0.001
MAX
5.5
VCC-1 *
2.5
5.5
1
5
Technical Note
Unit
V
V
V
V
µF
*5 However, irrespective of charging order of VCC and VIN.
* No radiation-resistant design is adopted for the present product.
●Electrical
Characteristics (unless otherwise noted, Ta=25 VCC=5V Ven=3V VIN=1.8V R1=3.9KΩ R2=3.3KΩ)
Limits
Parameter
Symbol
Unit
Condition
MIN
TYP
MAX
Bias Current
Bias current
Shut-Down Mode Current
Output Voltage
Maximum Output Current
Maximum Short Current
Temperature coefficient of Output Voltage
Feed Back Voltage 1
Feed Back Voltage 2
Line Regulation 1
Line Regulation 2
Dropout Voltage (BD3506F)
Dropout Voltage (BD3506EFV)
Standby Discharge Current
[Enable]
High level Enable Input Voltage
Low level Enable Input Voltage
Enable pin Input Current
[Voltage Feed Back]
Feed Back terminal Bias Current
[NRCS]
NRCS Charge Current
NRCS Standby Voltage
[UVLO]
VCC UVLO
VCC UVLO Hysteresis
*5 Design Guarantee
I
CC
I
ST
V
OUT
Io
Iost
Tcvo
V
FB1
V
FB2
Reg.l1
Reg.l2
Reg.L
dVo
dVo
Iden
Enhi
Enlow
Ien
I
FB
Inrcs
V
STB
V
CCUVLO
Vcchys
-
-
-
2.5
-
-
0.643
0.630
-
-
-
-
-
150
2
-0.3
-
-100
14
-
4.00
100
0.7
0
1.200
-
2.0
0.01
0.650
0.650
0.1
0.1
0.5
120
100
-
-
-
7
0
20
0
4.15
160
1.4
10
-
-
-
-
0.657
0.670
0.5
0.5
10
200
160
-
5.5
0.8
10
100
26
50
4.30
220
mA
µA
V
A
A
%/℃
V
V
%/V
%/V
mV
mV
mV
mA
V
V
µA
nA
µA
mV
V
mV
Vnrcs=0.5V
Ven=0V
Vcc:Sweep-up
Vcc:Sweep-down
Ven=3V
Io=50mA
Io=0 to 2A, Ta=-10 to 100℃*
5
VCC=4.3V to 5.5V
VIN=1.2V to 3.3V
Io=0 to 2A
Io=1A,VIN=1.2V, Ta=-10 to 100℃*
5
Io=1A,VIN=1.2V, Ta=-10 to 100℃*
5
Ven=0V, Vo=1V
Vo=0V
Ven=0V
Io=50mA
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© 2010 ROHM Co., Ltd. All rights reserved.
2/14
2010.05 - Rev.A
BD3506F,BD3506EFV
●Reference
Data
⊿Vout
(50mV/div)
EN
Vin
IIN(uA)
6
4
2
0
0
2
10
8
Technical Note
Vcc
Iout
(1A/div)
Vo
4
VIN(V)
6
8
Fig.1 Transient Response
Fig.2 Input Voltage
SequenceFinal Input Voltage
EN
656
655
654
Fig.3 VIN-IIN(Ta=25℃)
EN
Vin
Vfb(mV)
EN
Vin
653
652
651
650
649
Vcc
Vcc
Vo
648
647
646
-10
10
30
50
Ta(
℃
)
70
90
Vo
Fig.4 Input Voltage
SequenceFinal Input Voltage
VIN
Fig.5 Ta-Vfb
Fig.6 Input Voltage
SequenceFinal Input Voltage
VCC
18
16
Vo
20mV/DIV
Vo
20mV/DIV
IEN(uA)
14
12
10
8
6
4
2
0
0
1
2
3
VEN(V)
4
5
Io
1A/DIV
Io
1A/DIV
Fig.7 Transient Response (rise)
Cout=100uF
Fig.8 Transient Response (fall)
Cout=100uF
Fig.9 VEN-IEN
Vo
20mV/DIV
EN
2V/DIV
NRCS
0.5V/DIV
EN
2V/DIV
NRCS
0.5V/DIV
Vo
0.5V/DIV
Io
1A/DIV
Vo
0.5V/DIV
Fig.10 Transient Response (rise)
Cout=220uF
Fig.11 Start up Wave Form
Fig.12 Shut down Wave Form
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© 2010 ROHM Co., Ltd. All rights reserved.
3/14
2010.05 - Rev.A
Microcontroller MCU
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