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BD434

Description
RF POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size262KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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BD434 Overview

RF POWER TRANSISTOR

BD434 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeRF POWER
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
BD434/BD436/BD438
Features
Intended for use in medium power near and switching applications
With TO-126 package
The complementary NPN type is BD433, BD435, BD437
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
PNP Silicon
Power Transistors

A
K
N
Marking: Type Number
Maximum Ratings
Symbol
V
CEO
Rating
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
BD434
BD436
BD438
BD434
BD436
BD438
BD434
BD436
BD438
Rating
-22
-32
-45
-22
-32
-45
-5.0
-4.0
1.25
-55 to +150
-55 to +150
A
W
1
Unit
V
E
D
V

B
M
V
EBO
Emitter-Base Voltage
V
2
3
L
G
I
C
P
C
T
J
T
STG
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature




Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
BD434
(I
C
=-10mAdc, I
B
=0)
BD436
BD438
Collector-Base Breakdown Voltage
BD434
(I
C
=-1mAdc, I
E
=0)
BD436
BD438
Emitter-Base Breakdown Voltage
(I
E
=-1mAdc, I
C
=0)
Collector-Base Cutoff Current
BD434
(V
CB
=-22Vdc,I
E
=0)
(V
CB
=-32Vdc,I
E
=0)
BD436
BD438
(V
CB
=-45Vdc,I
E
=0)
Collector-Base Cutoff Current
(V
CE
=-22Vdc,I
E
=0)
BD434
BD436
(V
CE
=-32Vdc,I
E
=0)
BD438
(V
CE
=-45Vdc,I
E
=0)
Emitter-Base Cutoff Current
(V
EB
=-5.0Vdc, I
C
=0)
Min
Max
Units
C
OFF CHARACTERISTICS
V
(BR)CEO
-22
-32
-45
-22
-32
-45
-5
---
---
---
---
---
---
---
Vdc
V
(BR)CBO
Vdc
J
F
PIN 1.
PIN 2.
PIN 3.
DIMENSIONS
Q
EMITTER
COLLECTOR
BASE
V
(BR)EBO
I
CBO
Vdc
---
-100
uAdc










L
M
N
Q
I
CEO
---
-100
uAdc
I
EBO
---
-1.0
mAdc
Notes: 1.
High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
 





0.291
0.307
0.417
0.433
0.602
0.618
4
1
0.118
0.126
0.026
0.034
0.046
0.054
0.090TYP
0.098
0.114
0.083
0.091
0.000
0.012
0.043
0.059
0.018
0.024






7.40
7.80
10.60
11.00
15.30
15.70
3.90
4.10
3.00
3.20
0.66
0.86
1.17
1.37
2.290TYP
2.50
2.90
2.10
2.30
0.00
0.30
1.10
1.50
0.45
0.60
 
Revision: A
www.mccsemi.com
1 of 3
2011/01/01

BD434 Related Products

BD434 BD436 BD438
Description RF POWER TRANSISTOR RF POWER TRANSISTOR POWER TRANSISTOR
state ACTIVE ACTIVE ACTIVE
Transistor type RF POWER RF POWER GENERAL PURPOSE POWER

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