High-accuracy detection voltage
Low current consumption
VOL AGE DETECTOR IC
T
with adjustable delay time
BD52XXG
BD53XXG
5
4
1pin : RESET output
2pin : Supply voltage
3pin : GND
4pin : N.C.
5pin : CT
BD52XXG/FVE series
BD53XXG/FVE series
Description
BD52XXG/FVE, BD53XXG/FVE are series of high-accuracy
detection voltage and low current consumption VOLTAGE
DETECTOR ICs adopting CMOS process.
New lineup of 152 types with delay time circuit have developed
in addition to well-reputed 152 types of VOLTAGE DETECTOR ICs.
Any delay time can be established by using small capacitor due to
high-resistance process technology.
Total 152 types of VOLTAGE DETECTOR ICs including
BD52XXG/FVE series (Nch open drain output) and BD53XXG/
FVE series (CMOS output), each of which has 38 kinds in every
0.1V step (2.3~6.0V) have developed.
Features
1) Detection voltage: 0.1V step line-up 2.3~6.0V (Typ.)
2) High-accuracy detection voltage:±1.5% (Max.)
3) Ultra low current consumption: 0.95µA (Typ.)
4) Nch open drain output (BD52XXG/FVE series),
CMOS output (BD53XXG/FVE series)
5) Small VSOF5
(EMP5)
, SSOP5
(SMP5C2)
package
Applications
Every kind of appliances with microcontroller
and logic circuit
Application Circuit
BD52XXG/FVE
V
DD
V
DD
V
DD
V
DD
1
2
3
(UNIT:mm)
2.9±0.2
(5)
(4)
2.8
±
0.2
1.6
+0.2
–0.1
(1) (2) (3)
1.25MAX
1.1
±
0.05±0.05
0.05
0.95
0.42
+0.05
–0.04
0.1
SSOP5
(SMP5C2)
BD53XXFVE
BD53XXFVE
5
1
2
4
3
1.6
±
0.05
1.0
±
0.05
5
4
1pin : RESET output
2pin : SUB
Connect to GND
3pin : CT
4pin : GND
5pin : Supply voltage
0.2MAX
0.13
±
0.05
0.08
M
1.6
±
0.05
1.2
±
0.05
1
2
3 Lot No.
0.6MAX
0.5
0.22
±
0.05
VSOF5
(EMP5)
BD53XXG/FVE
V
DD
Vout
Reset
Vout
Reset
Vref
Vref
GND
CT
GND
CT
Pin No.
SSOP5
(SMP5C2)
VSOF5
(EMP5)
1
Vout
Vout
2
V
DD
SUB
3
GND
CT
4
NC.
GND
5
CT
V
DD
0.2MIN
0.13
+0.05
–0.03
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Power supply voltage
Output voltage
Nch open drain output
CMOS output
Symbol
VDD – GND
V
OUT
V
CT
Pd
Pd
Topr
Tstg
Input voltage of CT
Power dissipation:
SSOP5
(SMP5C2)
*
1
Power dissipation:
VSOF5
(EMP5)
*
2
Operating temperature range
Storage temperature range
Limits
– 0.3 ~ + 10
GND – 0.3 ~ + 10
GND – 0.3 ~ VDD + 0.3
GND – 0.3 ~ VDD + 0.3
540
210
– 40 ~ + 85
– 55 ~ + 125
Unit
V
V
V
mW
mW
˚C
˚C
*
1
Derating: 5.4mW/
˚C
for operation above Ta=25
˚C
.(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.)
*
2
Derating: 2.1mW/
˚C
for operation above Ta=25
˚C
.(Mounted on a 70.0mmX70.0mmX16mm glass epoxy PCB.)
Electrical characteristics (
Unless otherwise noted; Ta=-25~85˚C)
Parameter
Detection voltage
temperature coefficient
*1
Symbol
Min.
Typ.
±100
VsX0.05
0.80
0.85
0.90
0.95
0.75
0.80
0.85
0.90
—
1.2
5.0
1.4
1.8
2.2
—
V
DD
X0.4
V
DD
X0.45
V
DD
X0.5
V
DD
X0.5
9
40
240
Max.
Unit
Conditions
L
V
DET
=2.3~3.1V
V
DET
=3.2~4.2V
V
DD
=V
DET
–0.2V
V
DET
=4.3~5.2V
V
DET
=5.3~6.0V
V
DET
=2.3~3.1V
V
DET
=3.2~4.2V
V
DD
=V
DET
+2V
V
DET
=4.3~5.2V
V
DET
=5.3~6.0V
R
L
=470kΩ, V
OL
≥
0.4V
V
DS
=0.5V, V
DD
=1.2V
V
DS
=0.5V, V
DD
=2.4V (V
DET
≥
2.7V)
V
DS
=0.5V, V
DD
=4.8V V
DET
=2.3~4.2V
V
DS
=0.5V, V
DD
=6.0V V
DET
=4.3~5.2V
V
DS
=0.5V, V
DD
=8.0V V
DET
=5.3~6.0V
V
DD
=V
DS
=10V
V
DET
=2.3~2.6V
V
DET
=2.7~4.2V
V
DD
=V
DET
X1.1
V
DET
=4.3~5.2V
V
DET
=5.3~6.0V
V
DD
=V
DET
X1.1
V
CT
=0.1V,V
DD
=0.95V
V
CT
=0.5V,V
DD
=1.5V
RL=470kΩ, V
DD
=L
H
Hysteresis voltage
Circuit current when ON
Circuit current when OFF
Min. operating voltage
"L" output current
"H" output current
Output leak current
*1
CT pin Threshold voltage
Output delay resistance
*1
CT pin output current
*1
—
V
DET
/∆T
∆V
DET
VsX0.03
—
—
Icc1
—
—
—
—
Icc2
—
—
V
OPL
0.95
0.4
I
OL
2.0
0.7
I
OH
0.9
1.1
Ileak
—
V
DD
X0.3
V
CTH
V
DD
X0.3
V
DD
X0.35
V
DD
X0.4
R
CT
5.5
15
I
CT
150
±360
ppm/ ˚C
VsX0.08
%
2.40
2.55
µA
2.70
2.85
2.25
2.40
µA
2.55
2.70
—
V
—
mA
—
—
mA
—
—
0.1
µA
V
DD
X0.6
V
DD
X0.6
V
V
DD
X0.6
V
DD
X0.6
12.5
MΩ
—
µA
—
*1 This value is guranteed at Ta=25˚C.
*2 T
PLH
: V
DD
=(V
DET
typ.–0.5V)
(V
DET
typ.+0.5V).
Note) RL is not necessary for CMOS output type.
Note) Please refer to the detection voltage of Line-up table.
Characteristic diagram and Measurement circuit
10
1
Output delay time "L
[BD5242G/FVE]
H"
40.00
35.00
30.00
Output delay time "H
L"
[BD5242G/FVE]
delay time[s]
delay time[µs]
0.1
0.01
0.001
0.0001
0.00001
0.000001
0.0001
0.001
0.01
0.1
1
25.00
20.00
15.00
10.00
5.00
0.00
0.0001
0.0010
0.0100
0.1000
1.0000
CT Capacitance [µF]
5V
R
L
=100kΩ
V
DD
CT
V
DET
0.5V
GND
100pF
V
OUT
V
DET
0.5V
CT Capacitance[µF]
5V
R
L
=100kΩ
V
DD
CT
GND
100pF
V
OUT
MCU
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