BLS7G2933S-150
LDMOS S-band radar power transistor
Rev. 2 — 23 February 2011
Product data sheet
1. Product profile
1.1 General description
150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz
range.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C; t
p
= 300
μ
s;
δ
= 10 %; I
Dq
= 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
(GHz)
2.9 to 3.3
V
DS
(V)
32
P
L
(W)
150
G
p
(dB)
13.5
η
D
(%)
47
t
r
(ns)
20
t
f
(ns)
6
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage
of 32 V, an I
Dq
of 100 mA, a t
p
of 300
μs
with
δ
of 10 %:
Output power = 150 W
Power gain = 13.5 dB
Efficiency = 47 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2.9 GHz to 3.3 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency
range
NXP Semiconductors
BLS7G2933S-150
LDMOS S-band radar power transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLS7G2933S-150 -
Description
ceramic earless flanged cavity package; 2 leads
Version
SOT922-1
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Min
-
−0.5
-
−65
-
Max
60
+13
33
+150
200
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5.
Symbol
Z
th(j-mb)
Thermal characteristics
Parameter
Conditions
Typ
Unit
transient thermal impedance from junction T
case
= 85
°C;
P
L
= 150 W
to mounting base
t = 100
μs; δ
= 10 %
p
0.12 K/W
0.14 K/W
0.16 K/W
0.18 K/W
0.15 K/W
t
p
= 200
μs; δ
= 10 %
t
p
= 300
μs; δ
= 10 %
t
p
= 500
μs; δ
= 10 %
t
p
= 100
μs; δ
= 20 %
BLS7G2933S-150
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 23 February 2011
2 of 12
NXP Semiconductors
BLS7G2933S-150
LDMOS S-band radar power transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 0.6 mA
V
DS
= 10 V; I
D
= 180 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 6.3 A
Min
65
1.5
-
29
-
-
-
Typ
-
1.8
-
35
-
12.7
0.085
Max
-
2.3
4.2
-
420
-
Unit
V
V
μA
A
nA
S
0.135
Ω
7. Application information
Table 7.
Application information
Mode of operation: pulsed RF; t
p
= 300
μ
s;
δ
= 10 %; RF performance at V
DS
= 32 V; I
Dq
= 100 mA;
T
case
= 25
°
C; unless otherwise specified, in a class-AB production circuit.
Symbol
P
L
V
CC
G
p
RL
in
P
L(1dB)
η
D
P
droop(pulse)
t
r
t
f
Parameter
output power
supply voltage
power gain
input return loss
output power at 1 dB gain compression
drain efficiency
pulse droop power
rise time
fall time
P
L
= 150 W
P
L
= 150 W
P
L
= 150 W
P
L
= 150 W
P
L
= 150 W
P
L
= 150 W
P
L
= 150 W
-
44
-
-
-
Conditions
Min Typ
-
-
11
150
-
13.5
−10
170
47
0
20
6
Max
-
32
-
−5.5
-
-
0.3
50
50
Unit
W
V
dB
dB
W
%
dB
ns
ns
BLS7G2933S-150
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 23 February 2011
3 of 12
NXP Semiconductors
BLS7G2933S-150
LDMOS S-band radar power transistor
Typical impedance
Z
S
Ω
2.2
−
j7.4
2.9
−
j6.5
4.2
−
j5.9
6.0
−
j6.5
6.5
−
j8.9
Z
L
Ω
4.2
−
j6.3
3.8
−
j6.4
3.4
−
j6.3
2.9
−
j6.2
2.5
−
j5.9
Table 8.
f
GHz
2.9
3.0
3.1
3.2
3.3
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS7G2933S-150 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 32 V;
I
Dq
= 100 mA; P
L
= 150 W; t
p
= 300
μs; δ
= 10 %.
BLS7G2933S-150
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 23 February 2011
4 of 12
NXP Semiconductors
BLS7G2933S-150
LDMOS S-band radar power transistor
7.2 Graphs
200
P
L
(W)
160
(5)
(4)
(3)
(2)
(1)
001aan028
17
G
p
(dB)
15
001aan029
120
13
(1)
(2)
(3)
(4)
(5)
80
11
40
9
0
0
4
8
P
i
(W)
12
7
0
40
80
120
160
200
P
L
(W)
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 300
μs; δ
= 10 %.
(1) f = 2900 MHz
(2) f = 3000 MHz
(3) f = 3100 MHz
(4) f = 3200 MHz
(5) f = 3300 MHz
V
DS
= 32 V; I
Dq
= 100 mA; t
p
= 300
μs; δ
= 10 %.
(1) f = 2900 MHz
(2) f = 3000 MHz
(3) f = 3100 MHz
(4) f = 3200 MHz
(5) f = 3300 MHz
Fig 2.
Load power as a function of input power;
typical values
Fig 3.
Power gain as a function of load power; typical
values
BLS7G2933S-150
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 23 February 2011
5 of 12
京公网安备 11010802033920号
EEWORLD
