INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BD943F/945F/947F
DESCRIPTION
·DC
Current Gain-
: h
FE
= 85(Min)@ I
C
= 500mA
·Complement
to Type BD944F/946F/948F
APPLICATIONS
·Designed
for use in audio output stages and general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD943F
V
CBO
Collector-Base Voltage
BD945F
BD947F
BD943F
V
CEO
Collector-Emitter Voltage
BD945F
BD947F
V
EBO
I
C
I
CM
I
B
B
VALUE
22
32
45
22
32
45
5
5
8
1
22
150
-65~150
UNIT
V
V
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
V
A
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
7.93
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD943F
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
BD945F
BD947F
BD943F/945F
BD947F
BD943F/945F
BD947F
I
CBO
Collector Cutoff Current
BD943F
I
CEO
Collector
Cutoff Current
BD945F
BD947F
I
EBO
h
FE-1
h
FE-2
Emitter Cutoff Current
DC Current Gain
DC Current Gain
BD943F/945F
h
FE-3
DC Current Gain
BD947F
h
FE-4
f
T
DC Current Gain--Only
For BD947F
Current-Gain—Bandwidth Product
I
C
= 3A ; V
CE
= 1V
I
C
= 250mA ; V
CE
= 1V
I
C
= 2A ; V
CE
= 1V
I
C
= 2A; I
B
= 0.2A
B
BD943F/945F/947F
CONDITIONS
MIN
22
TYP.
MAX
UNIT
I
C
= 100mA ; I
B
= 0
32
45
0.5
V
V
CE(
sat
)
Collector-Emitter
Saturation Voltage
V
I
C
= 3A; I
B
= 0.3A
B
0.7
1.1
V
1.3
0.05
1
mA
V
BE(
on
)
Base-Emitter
On Voltage
I
C
= 2A; V
CE
= 1V
I
C
= 3A; V
CE
= 1V
V
CB
= V
CBOmax
; I
E
= 0
V
CB
= V
CBOmax
; I
E
= 0,T
J
=150℃
V
CE
= 15V; I
B
= 0
B
V
CE
= 20V; I
B
= 0
B
0.1
mA
V
CE
= 25V; I
B
= 0
B
V
EB
= 5V; I
C
= 0
I
C
= 10mA ; V
CE
= 5V
I
C
= 500mA ; V
CE
= 1V
25
85
50
40
30
3
0.2
mA
475
MHz
isc Website：www.iscsemi.cn
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