INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BD955
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 120V(Min)
·DC
Current Gain-
: h
FE
= 40(Min)@ I
C
= 500mA
·Complement
to Type BD956
APPLICATIONS
·Designed
for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
120
120
5
5
8
40
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
3.12
70
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
sat
)
V
BE(
on
)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
CONDITIONS
I
C
= 1mA ; I
B
= 0
I
C
= 1mA ; I
E
= 0
I
E
= 1mA ; I
C
= 0
I
C
= 2A; I
B
= 0.2A
B
BD953
MIN
120
120
5
TYP.
MAX
UNIT
V
V
V
1.0
1.4
50
1.0
0.1
0.2
40
20
3
V
V
μA
mA
mA
mA
I
C
= 2A; V
CE
= 4V
V
CB
= 120V; I
E
= 0
I
CBO
Collector Cutoff Current
V
CB
= 60V; I
E
= 0,T
J
=150℃
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
V
CE
= 60V; I
B
= 0
B
V
EB
= 5V; I
C
= 0
I
C
= 500mA ; V
CE
= 4V
I
C
= 2A ; V
CE
= 4V
I
C
= 500mA ; V
CE
= 4V
MHz
Switching Times
t
on
t
off
Turn-On Time
Turn-Off Time
0.3
1.5
μs
μs
I
C
= 1.0A; I
B1
= -I
B2
= 0.1A;
V
CC
= 20V; R
L
= 20Ω
isc Website：www.iscsemi.cn
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