INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
DESCRIPTION
·DC
Current Gain -h
FE
= 30(Min)@ I
C
= -
0.3A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -40V(Min)- BDT42; -60V(Min)- BDT42A
-80V(Min)- BDT42B; -100V(Min)- BDT42C
·Complement
to Type BDT41/A/B/C
APPLICATIONS
·Designed
for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
BDT42
BDT42A
V
CBO
Collector-Base Voltage
BDT42B
BDT42C
BDT42
BDT42A
V
CEO
Collector-Emitter Voltage
BDT42B
BDT42C
V
EBO
I
C
I
CM
I
B
B
BDT42/A/B/C
VALUE
-80
-100
UNIT
V
-120
-140
-40
-60
V
-80
-100
-5
-6
-10
-3
65
150
-65~150
V
A
A
A
W
℃
℃
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.92
70
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDT42
BDT42A
I
C
= -30mA; I
B
= 0
BDT42B
BDT42C
V
CE(sat)
V
BE(on)
I
CES
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
BDT42/A
I
CEO
Collector Cutoff Current
BDT42B/C
I
EBO
h
FE-1
h
FE-2
f
T
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
V
CE
= -60V; I
B
= 0
B
BDT42/A/B/C
CONDITIONS
MIN
-40
-60
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
-80
-100
I
C
= -6A; I
B
= -0.6A
B
-1.5
-2.0
-0.4
V
V
mA
I
C
= -6A ; V
CE
= -4V
V
CE
= V
CEOmax
; V
BE
= 0
V
CE
= -30V; I
B
= 0
B
-0.2
mA
V
EB
= -5V; I
C
= 0
I
C
= -0.3A ; V
CE
= -4V
I
C
= -3A ; V
CE
= -4V
I
C
= -0.5A ; V
CE
= -10V
30
15
3
-0.5
mA
75
MHz
Switching Times
t
on
t
off
Turn-On Time
I
C
= -6A; I
B1
= -I
B2
= -0.6A
Turn-Off Time
0.7
μs
0.4
μs
isc Website：www.iscsemi.cn
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