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BDT64F

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size79KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet Parametric Compare View All

BDT64F Overview

POWER TRANSISTOR

BDT64F Parametric

Parameter NameAttribute value
stateActive
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector
Current -I
C
= -
12A
·High
DC Current Gain-h
FE
= 1000(Min)@ I
C
= -5A
·Complement
to Type BDT65F/AF/BF/CF
APPLICATIONS
·Designed
for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDT64F
Collector-Emitter
Voltage
BDT64AF
BDT64BF
BDT64CF
BDT64F
Collector-Emitter
Voltage
BDT64AF
BDT64BF
BDT64CF
V
EBO
I
C
I
CM
I
B
B
BDT64F/AF/BF/CF
VALUE
-60
-80
UNIT
V
CER
V
-100
-120
-60
-80
V
-100
-120
-5
-12
-20
-0.5
39
150
-65~150
V
A
A
A
W
V
CEO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
5.7
UNIT
℃/W
isc Website:www.iscsemi.cn

BDT64F Related Products

BDT64F BDT64AF BDT64BF BDT64CF
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