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BDX18

Description
15A, 70V, PNP, Si, POWER TRANSISTOR, TO-204AA
Categorysemiconductor    Discrete semiconductor   
File Size35KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet Parametric View All

BDX18 Overview

15A, 70V, PNP, Si, POWER TRANSISTOR, TO-204AA

BDX18 Parametric

Parameter NameAttribute value
Number of terminals2
Transistor polarityPNP
Maximum collector current15 A
Maximum Collector-Emitter Voltage70 V
Processing package descriptionHERMETIC SEALED, METAL, TO-3, 2 PIN
stateACTIVE
packaging shapeROUND
Package SizeFLANGE MOUNT
Terminal formPIN/PEG
terminal coatingNOT SPECIFIED
Terminal locationBOTTOM
Packaging MaterialsMETAL
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor20
Rated crossover frequency0.8000 MHz
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BDX18
DESCRIPTION
・With
TO-3 package
・High
switching speed
APPLICATIONS
・LF
large signal power amplification
・Suitable
for series and shunt regulators, high
fidelity amplifiers and power switching circuits
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-60
-7
-15
-7
117
-65~200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.5
UNIT
℃/W
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