The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in
monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package.
They are intented for use in power linear and switching applications.
The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
Value
45
60
80
100
45
60
80
100
10
15
0.25
70
-65 to +150
Unit
V
CEO
Collector-Emitter Voltage
I
B
=0
V
V
CBO
Collector-Base Voltage
I
E
=0
I
C(RMS)
I
CM
@ T
C
= 25°
V
I
C
I
B
P
T
T
J
T
S
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.78
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1/4
NPN BDX33 – BDX33A – BDX33B – BDX33C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter
Breakdown Voltage (*)
Test Condition(s)
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
Min
45
60
80
100
45
60
80
100
45
60
80
100
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
-
-
-
-
-
-
-
-
0.5
Unit
V
CEO(SUS)
I
C
=100 mA
V
V
CER(SUS)
Collector-Emitter
Sustaining Voltage (*)
I
B
=100 mA,
R
BE
=100Ω
V
V
CEV(SUS)
Collector-Emitter
Sustaining Voltage (*)
I
C
=100 mA
V
BE
=-1.5 V
V
CB
=22V
V
CB
=30V
V
CB
=40V
V
CB
=50V
V
CB
=22V, T
C
=100°C
V
CB
=30V, T
C
=100°C
V
CB
=40V, T
C
=100°C
V
CB
=50V, T
C
=100°C
V
I
CEO
Collector Cutoff Current
mA
10
I
EBO
Emitter Cutoff Current
V
BE
=-5 V
-
-
5.0
mA
I
CBO
Collector-Base Cutoff
Current
V
CBO
=45 V
V
CBO
=60 V
V
CBO
=80 V
V
CBO
=100 V
-
-
-
-
-
-
-
-
0.2
mA
23/10/2012
COMSET SEMICONDUCTORS
2/4
NPN BDX33 – BDX33A – BDX33B – BDX33C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
V
CBO
=45 V
T
C
=100°C
V
CBO
=60 V
T
C
=100°C
V
CBO
=80 V
T
C
=100°C
V
CBO
=100 V
T
C
=100°C
BDX33
BDX33A
BDX33B
BDX33C
Min
-
-
-
-
Typ
-
-
Max
Unit
I
CBO
Collector-Base Cutoff
Current
5
-
-
mA
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
V
F
Forward Voltage (pulse
method)
V
BE
Base-Emitter Voltage (*)
h
FE
DC Current Gain (*)
BDX33
BDX33A
I
C
=4.0 A, I
B
=8.0 mA
BDX33B
BDX33C
BDX33
BDX33A
I
C
=3.0 A, I
B
=6.0 mA
BDX33B
BDX33C
BDX33
BDX33A
I
F
=8 A
BDX33B
BDX33C
BDX33
I
C
=4.0 A, V
CE
=3.0V
BDX33A
BDX33B
I
C
=3.0 A, V
CE
=3.0V
BDX33C
BDX33
V
CE
=3.0 V, I
C
=4.0 A
BDX33A
BDX33B
V
CE
=3.0 V, I
C
=3.0 A
BDX33C
-
-
2.5
V
-
-
2.5
-
-
4.0
V
-
-
750
750
-
-
-
-
2.5
V
2.5
-
-
-
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
23/10/2012
COMSET SEMICONDUCTORS
3/4
NPN BDX33 – BDX33A – BDX33B – BDX33C
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
0,46
2,50
4,98
2.49
0,70
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Base
Collector
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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