BF961
Vishay Semiconductors
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
•
•
•
•
•
•
Integrated gate protection diodes
High cross modulation performance
Low noise figure
High AGC-range
Low feedback capacitance
Low input capacitance
2
3
4
1
G2
G1
D
S
Applications
Input- and mixer stages especially for FM- and VHF
TV-tuners up to 300 MHz.
Electrostatic sensitive device.
Observe precautions for handling.
13625
Mechanical Data
Case:
TO-50 Plastic case
Weight:
approx. 124 mg
Marking:
BF961
Pinning:
1 = Drain, 2 = Source,
3 = Gate 1, 4 = Gate 2
Parts Table
Part
BF961
BF961A
BF961B
Ordering Ccode
BF961A or BF961B
BF961A
BF961B
BF961
BF961
BF961
Marking
TO50
TO50
TO50
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Total power dissipation
Channel temperature
Storage temperature range
T
amb
≤
60 °C
Test condition
Symbol
V
DS
I
D
± I
G1/G2SM
P
tot
T
Ch
T
stg
Value
20
30
10
200
150
- 55 to + 150
Unit
V
mA
mA
mW
°C
°C
Maximum Thermal Resistance
Parameter
Channel ambient
1)
1)
Test condition
Symbol
R
thChA
Value
450
Unit
K/W
on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35
µm
Cu
www.vishay.com
1
Document Number 85002
Rev. 1.5, 25-Nov-04
BF961
Vishay Semiconductors
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Drain - source breakdown
voltage
Gate 1 - source breakdown
voltage
Gate 2 - source breakdown
voltage
Test condition
I
D
= 10
µA,
- V
G1S
= - V
G2S
= 4 V
± I
G1S
= 10 mA, V
G2S
= V
DS
= 0
± I
G2S
= 10 mA, V
G1S
= V
DS
= 0
Part
Symbol
V
(BR)DS
± V
(BR)G1SS
± V
(BR)G2SS
± I
G1SS
± I
G2SS
I
DSS
I
DSS
I
DSS
- V
G1S(OFF)
- V
G2S(OFF)
4
4
9.5
BF961A
BF961B
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V,
I
D
= 20
µA
V
DS
= 15 V, V
G1S
= 0, I
D
= 20
µA
Min
20
8
8
Typ.
VISHAY
Max
Unit
V
14
14
100
100
20
10.5
20
3.5
3.5
V
V
nA
nA
mA
mA
mA
V
V
Gate 1 - source leakage current ± V
G1S
= 5 V, V
G2S
= V
DS
= 0
Gate 2 - source leakage current ± V
G2S
= 5 V, V
G1S
= V
DS
= 0
Drain current
V
DS
= 15 V, V
G1S
= 0, V
G2S
= 4 V BF961
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz
Parameter
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
G
S
= 2 mS, G
L
= 0.5 mS,
f = 200 MHz
V
G2S
= 4 to - 2 V, f = 200 MHz
G
S
= 2 mS, G
L
= 0.5 mS,
f = 200 MHz
V
G1S
= 0, V
G2S
= 4 V
Test condition
Symbol
| y
21s
|
C
issg1
C
issg2
C
rss
C
oss
G
ps
∆G
ps
F
Min
12
Typ.
15
3.7
1.6
25
1.6
20
50
1.8
2.5
Max
Unit
mS
pF
pF
fF
pF
dB
dB
dB
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
300
250
I
D
– Drain Current ( mA)
P
tot
-Total
Power Dissipation ( mW )
22
20
18
16
14
12
10
8
6
4
2
0
0
20
40
60
80
100 120 140 160
96 12160
V
G1S
= 0.6 V
0.4 V
0.2 V
0
–0.2 V
–0.4 V
–0.6 V
–0.8 V
0
2
4 6 8 10 12 14 16 18 20 22 24
V
DS
– Drain Source Voltage ( V )
200
150
100
50
0
T
amb
- Ambient Temperature (
°C
)
96 12159
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Drain Current vs. Drain Source Voltage
www.vishay.com
2
Document Number 85002
Rev. 1.5, 25-Nov-04
VISHAY
BF961
Vishay Semiconductors
24
22
20
18
16
14
12
10
8
6
4
2
0
–2
C
issg2
– Gate 2 Input Capacitance ( pF )
Y
21S
– ForwardTransadmittance ( mS )
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
–2
–1
0
1 2
3 4
5 6
7
V
G2S
– Gate 2 Source Voltage ( V )
V
DS
= 15 V
V
G1S
= 0
f = 1 MHz
V
DS
= 15 V
I
DS
= 10 mA
V
G1S
= 0.5 V
0V
–0.5 V
96 12161
–1
0
1
2
3
4
5
6
V
G2S
– Gate 2 Source Voltage ( V )
96 12164
Figure 3. Forward Transadmittance vs. Gate 2 Source Voltage
Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage
Y
21S
– ForwardTransadmittance ( mS )
20
18
16
14
12
10
8
6
4
2
V
DS
= 15 V
f = 1 MHz
C
oss
– Output Capacitance ( pF )
22
V
G2S
= 5 V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
8 10 12 14 16 18 20 22
V
G2S
= 4 V
f = 1 MHz
4V
0V
3V
2V
1V
0
-2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5
V
G1S
- Gate 1 Source Voltage ( V )
96 12162
96 12165
V
DS
- Drain Source V oltage ( V )
Figure 4. Forward Transadmittance vs. Gate 1 Source Voltage
Figure 7. Output Capacitance vs. Drain Source Voltage
C
issg1
– Gate 1 Input Capacitance ( pF )
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
DS
= 15 V
V
G2S
= 4 V
f = 1 MHz
18
16
14
Im ( y
11
) ( mS )
f =700 MHz
600 MHz
500 MHz
400 MHz
12
10
8
6
4
2
0
0
1
2
3
4
300 MHz
200 MHz
100 MHz
V
DS
= 15 V
V
G2S
= 4 V
I
D
= 5...20 mA
f = 50...700 MHz
5
6
7
8
9
10
0.0
–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
96 12163
V
G1S
– Gate 1 Source Voltage ( V )
96 12166
Re (y
11
) ( mS )
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
Figure 8. Short Circuit Input Admittance
Document Number 85002
Rev. 1.5, 25-Nov-04
www.vishay.com
3
BF961
Vishay Semiconductors
VISHAY
10
5
0
Im ( y
21
) ( mS )
V
DS
= 15 V
V
G2S
= 4 V
f = 50...700 MHz
I
D
= 5 mA
10 mA
20 mA
f = 50 MHz
100 MHz
200 MHz
300 MHz
–5
–10
–15
–20
–25
400 MHz
500 MHz
600 MHz
700 MHz
–30
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
96 12167
Re (y
21
) ( mS )
Figure 9. Short Circuit Forward Transfer Admittance
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
f = 700 MHz
600 MHz
500 MHz
400 MHz
300 MHz
200 MHz
100 MHz
0.2
0.4
0.6
I
D
= 20 mA
V
DS
= 15 V
V
G2S
= 4 V
I
D
= 5...20 mA
f = 50...700 MHz
0.8
1.0
1.2
1.4
Im ( y
22
) ( mS )
I
D
= 5 mA
96 12168
Re (y
22
) ( mS )
Figure 10. Short Circuit Output Admittance
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4
Document Number 85002
Rev. 1.5, 25-Nov-04
VISHAY
V
DS
= 15 V, I
D
= 5 to 20 mA, V
G2S
= 4 V, Z
0
= 50
Ω
S
11
j
j0.5
j2
150°
j0.2
j5
300
180°
700 MHz
600
0.04
0.08
30 °
BF961
Vishay Semiconductors
S
12
90 °
120°
60 °
0
0.2
0.5
1
2
5
100
50
∞
0°
–j0.2
700 MHz
–j0.5
500
300
–j2
–j5
–150 °
–30°
–120 °
12921
–60°
–90 °
12920
–j
Figure 11. Input Reflection Coefficient
Figure 13. Reverse Transmission Coefficient
S
21
ID= 20 mA
ID= 10 mA
ID= 5 mA
200
50
180 °
700MHz
0.8
1.6
0°
400
30°
90°
120°
60°
S
22
j
j0.5
j2
j0.2
j5
ı
∞
100
300
500
–j5
700 MHz
2
5
–j2
–j
0
0.2
0.5
1
–150°
–30 °
–j0.2
–120°
12922
–60°
–90 °
12923
–j0.5
Figure 12. Forward Transmission Coefficient
Figure 14. Output Reflection Coefficient
Document Number 85002
Rev. 1.5, 25-Nov-04
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