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BF964S

Description
SMALL SIGNAL, FET
CategoryDiscrete semiconductor    The transistor   
File Size127KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BF964S Overview

SMALL SIGNAL, FET

BF964S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.225 W
surface mountYES
Base Number Matches1
BF964S
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages especially VHF TV-tuners.
Features
D
Integrated gate protection diodes
D
High cross modulation performance
D
Low noise figure
3
4
2
94 9307
96 12647
D
High AGC-range
D
Low feedback capacitance
D
Low input capacitance
G
2
G
1
D
1
BF964S Marking: BF964S
Plastic case (TO 50)
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
12623
S
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Storage temperature range
Test Conditions
Type
Symbol
Value
V
DS
20
I
D
30
±I
G1/G2SM
10
P
tot
200
T
Ch
150
T
stg
–55 to +150
Unit
V
mA
mA
mW
°
C
°
C
T
amb
60
°
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thChA
Value
450
Unit
K/W
Document Number 85003
Rev. 3, 20-Jan-99
www.vishay.de
FaxBack +1-408-970-5600
1 (8)

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