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BF998RA-GS08

Description
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
CategoryDiscrete semiconductor    The transistor   
File Size316KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

BF998RA-GS08 Overview

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

BF998RA-GS08 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
Not for new design, this product will be obsoleted soon
BF998/BF998R/BF998RW
Vishay Semiconductors
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
2
1
Features
Integrated gate protection diodes
Low noise figure
e3
Low feedback capacitance
High cross modulation performance
Low input capacitance
High AGC-range
High gain
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
SOT143
3
1
4
2
SOT143R
4
1
3
2
SOT343R
Applications
• Input and mixer stages in UHF tuners
4
3
Electrostatic sensitive device.
Observe precautions for handling.
19216
Mechanical Data
Typ:
BF998
Case:
SOT143 Plastic case
Weight:
approx. 8.0 mg
Marking:
MO
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ:
BF998R
Case:
SOT143R Plastic case
Weight:
approx. 8.0 mg
Marking:
MOR
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ:
BF998RW
Case:
SOT343R Plastic case
Weight:
approx. 6.0 mg
Marking:
WMO
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Parts Table
Part
BF998
BF998A
BF998R
BF998RA
BF998RW
BF998RAW
BF998RBW
Ordering code
BF998A-GS08
BF998A-GS08
BF998RA-GS08
BF998RA-GS08
BF998RAW-GS08 or
BF998RBW-GS08
BF998RAW-GS08
BF998RBW-GS08
Type Marking
MO
MO
MOR
MOR
WMO
WMO
WMO
Remarks
SOT143
SOT143
SOT143R
SOT143R
SOT343R
SOT343R
SOT343R
Document Number 85011
Rev. 1.8, 05-Sep-08
www.vishay.com
1

BF998RA-GS08 Related Products

BF998RA-GS08 BF998A BF998A-GS08 BF998RAW-GS08 BF998RBW-GS08 BF998_08
Description N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Reach Compliance Code unknow unknown unknown unknow unknow -
Configuration Single SINGLE WITH BUILT-IN DIODE Single Single Single -
Maximum drain current (Abs) (ID) 0.03 A - 0.03 A 0.03 A 0.03 A -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE -
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 0.2 W - 0.2 W 0.2 W 0.2 W -
surface mount YES YES YES YES YES -
Base Number Matches 1 1 1 1 1 -
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