BFP405F
NPN Silicon RF Transistor*
•
For low current applications
•
Smallest Package 1.4 x 0.8 x 0.59 mm
•
Noise figure
F
= 1.25 dB at 1.8 GHz
outstanding
G
ms
= 23 dB at 1.8 GHz
•
Transition frequency
f
T
= 25 GHz
•
Gold metallization for high reliability
•
SIEGET
25 GHz f
T
- Line
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
* Short term description
4
3
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFP405F
Maximum Ratings
Parameter
Marking
ALs
1=B
Pin Configuration
2=E
3=C
4=E
Symbol
V
CEO
4.5
4.1
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
15
15
1.5
12
1
55
150
Package
-
TSFP-4
Value
Unit
V
-
Collector-emitter voltage
T
A
> 0 °C
T
A
≤
0 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
2)
T
S
≤
122 °C
Junction temperature
Ambient temperature
Storage temperature
1
Pb-containing
mA
mW
°C
-65 ... 150
-65 ... 150
package may be available upon special request
2
T
is measured on the collector lead at the soldering point to the pcb
S
2007-04-20
1
BFP405F
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
≤
500
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 15 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 5 mA,
V
CE
= 4 V, pulse measured
1
For
Unit
max.
-
10
100
1
130
V
µA
nA
µA
-
typ.
5
-
-
-
95
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4
-
-
-
60
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2007-04-20
2
BFP405F
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 10 mA,
V
CE
= 3 V,
f
= 2 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 2 mA,
V
CE
= 2 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 5 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Insertion power gain
V
CE
= 2 V,
I
C
= 5 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
Third order intercept point at output
2)
V
CE
= 2 V,
I
C
= 5 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
1dB Compression point at output
I
C
= 5 mA,
V
CE
= 2 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
18
-
25
0.05
-
0.1
GHz
pF
C
cb
C
ce
-
0.2
-
C
eb
-
0.25
-
F
G
ms
-
-
1.25
22.5
-
-
dB
dB
|S
21
|
2
-
18
-
IP
3
-
14
-
dBm
P
-1dB
-
0
-
ms = |
S
21 /
S
12|
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
2007-04-20
3
BFP405F
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
0.21024
39.251
1.7763
34.368
1.3152
1.3491
3.7265
4.5899
1.3364
0.99532
1.4935
0
3
fA
V
-
V
-
Ω
fF
ps
A
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
83.23
0.16493
10.526
0.25052
15
1.9289
0.70367
0.3641
0
0.48652
0
0
0.99469
-
A
-
mA
Ω
-
V
-
deg
-
fF
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.0405
15.761
0.96647
0.037223
0.21215
0.12691
0.37747
0.19762
96.941
0.08161
0.75
1.11
300
-
fA
-
fA
mA
Ω
-
V
fF
-
V
eV
K
C`-E`-dioden Data (Berkley-Spice 1G.6 Syntax):
IS = 2 fA; N = 1.02 -, RS = 20
Ω
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
L
BO
=
L
EO
=
L
CO
=
L
BI
=
L
EI
=
L
CI
=
C
BE
=
C
BC
=
C
CE
=
K
BO-EO
=
K
BO-CO
=
K
EO-CO
=
K
CI-EI
=
K
BI-CI
=
K
BI-EI
=
R
LBI
=
R
LEI
=
R
LCI
=
0.22
0.28
0.22
0.42
0.26
0.35
34
2
33
0.1
0.01
0.11
-0.05
-0.08
0.2
0.15
0.11
0.13
nH
nH
nH
nH
nH
nH
fF
fF
fF
-
-
-
-
-
-
Ω
Ω
Ω
The TSFP-4 package has two emitter leads. To avoid high
complexity fo the package equivalent circuit, both leads are
combined in one electrical connection.
R
LXI
are series resistors for the inductances L
XI
and K
xa-by
are the
coupling coefficients between the inductances L
ax
and L
yb
. The
referencepin for the couple ports are B, E, C, B`, E`, C
For examples and ready to use parameters please contact
your local Infineon Technologies distributor or sales office to
obtain a InfineonTechnologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
2007-04-20
4
BFP405F
For non-linear simulation:
· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
· If you need simulation of the reverse characteristics, add the diode with the
C'-E'- diode data between collector and emitter.
· Simulation of package is not necessary for frequencies < 100MHz.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note:
· This transistor is constructed in a common emitter configuration. This feature causes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
C
B
E
E
EHA07307
Transistor Schematic Diagram
The common emitter configuration shows the following advantages:
· Higher gain because of lower emitter inductance.
· Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
2007-04-20
5
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