BFP520
NPN Silicon RF Transistor
•
Low noise amplifier designed for low voltage
applications, ideal for 1.2 V or 1.8 V supply
voltage. Supports 2.9 V V
cc
with enough external
collector resistance.
•
High gain and low noise at high frequencies
due to high transit frequency f
T
= 45 GHz
•
Finds usage e.g. in cordless phones and
satellite receivers
•
Pb-free (RoHS compliant) standard package
with visible leads
•
Qualified according AEC Q101
3
4
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP520
Parameter
Marking
APs
1=B
Pin Configuration
2=E
3=C
4=E
Symbol
V
CEO
Package
-
SOT343
Value
Unit
-
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Collector-emitter voltage
T
A
= -55 °C
V
2.5
2.4
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
105 °C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
10
10
1
40
4
100
150
-55 ... 150
mW
°C
mA
Junction temperature
Storage temperature
1
T
S
is measured on the emitter lead at the soldering point to pcb
2010-08-16
BFP520
Thermal Resistance
Parameter
Symbol
R
thJS
Value
≤
450
Unit
Junction - soldering point
1)
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 2 V,
V
BE
= 0
V
CE
= 10 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 2 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 20 mA,
V
CE
= 2 V, pulse measured
1
For
Symbol
min.
V
(BR)CEO
I
CES
-
-
I
CBO
I
EBO
h
FE
-
-
70
2.5
Values
typ.
3
max.
3.5
Unit
V
nA
1
-
-
100
110
30
1000
30
3000
170
-
calculation of
R
thJA
please refer to Application Note AN077 Thermal Resistance
2010-08-16
BFP520
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 30 mA,
V
CE
= 2 V,
f
= 2 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 2 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
Power gain, maximum stable
1)
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Insertion power gain
V
CE
= 2 V,
I
C
= 20 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
Ω
Third order intercept point at output
V
CE
= 2 V,
I
C
= 20 mA,
f
= 1.8 GHz,
Z
S
=
Z
Sopt,
Z
L
=
Z
Lopt
V
CE
= 2 V,
I
C
= 7 mA,
f
= 1.8 GHz,
Z
S
=
Z
Sopt,
Z
L
=
Z
Lopt
1dB Compression point at output
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
I
C
= 7 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
1
G
32
-
45
0.07
-
0.13
GHz
pF
C
cb
C
ce
-
0.3
-
C
eb
-
0.33
-
NF
min
-
0.95
-
dB
G
ms
-
24
-
dB
|S
21
|
2
-
21.5
-
IP
3
-
-
P
-1dB
-
-
12
5
-
-
25
17
-
-
dBm
ms
= |S
21
/ S
12
|
2010-08-16
BFP520
Total power dissipation
P
tot
=
ƒ
(T
S
)
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
f
= 1MHz
120
mW
0.3
100
90
pF
P
tot
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
°C
150
C
CB
0.2
0.15
0.1
0.05
0
0
0.5
1
1.5
2
V
3
T
S
V
CB
Third order Intercept Point
IP
3
=
ƒ
(I
C
)
(Output,
Z
S
=
Z
L
= 50
Ω
)
V
CE
= parameter,
f
= 900 MHz
Transition frequency
f
T
=
ƒ
(I
C
)
f
= 2 GHz
V
CE
= parameter in V
52
GHz
2
44
40
1
36
f
T
32
28
24
20
16
12
8
4
0
0
5
10
15
20
25
30
0.5
0.75
35
mA
45
I
C
2010-08-16
BFP520
Power gain
G
ma
,
G
ms
, |S
21
|
2
=
ƒ
(f)
V
CE
= 2 V,
I
C
= 20 mA
44
dB
Power gain
G
ma
,
G
ms
=
ƒ
(I
C
)
V
CE
= 2V
f
= parameter in GHz
32
dB
0.9
36
32
28
24
16
20
16
12
8
4
4
0
0
1
2
3
4
GHz
|S21|²
Gma
4
5
6
G
ms
24
1.8
2.4
G
G
20
3
12
8
6
0
0
5
10
15
20
25
30
35
mA
45
f
I
C
Power gain
G
ma
,
G
ms
=
ƒ
(V
CE
)
I
C
= 20 mA
f
= parameter in GHz
32
dB
0.9
Minimum noise figure
NF
min
=
ƒ
(I
C
)
V
CE
= 2 V,
Z
S
=
Z
Sopt
3
dB
24
1.8
2.4
2
G
16
4
5
F
1.5
20
3
12
6
1
8
0.5
4
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
0
0
0.5
1
1.5
2
V
3
0
0
5
10
15
20
25
30
mA
40
V
CE
I
C
2010-08-16
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