BFR183T/BFR183TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 2 mA to 30 mA.
Features
D
Low noise figure
D
High power gain
1
1
13 581
94 9280
13 652
13 570
2
3
2
3
BFR183T Marking: RH
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
BFR183TW Marking: WRH
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
15
10
2
65
5
200
150
–65 to +150
Unit
V
V
V
mA
mA
mW
°
C
°
C
T
amb
≤
60
°
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thJA
Value
450
Unit
K/W
Document Number 86026
Rev. 2, 20-Jan-99
www.vishay.de
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BFR183T/BFR183TW
Vishay Telefunken
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
V
CE
= 15 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 30 mA, I
B
= 3 mA
V
CE
= 6 V, I
C
= 5 mA
V
CE
= 8 V, I
C
= 20 mA
Symbol Min
I
CES
I
CBO
I
EBO
V
(BR)CEO
10
V
CEsat
h
FE
50
h
FE
50
Typ
Max Unit
100
m
A
100 nA
1
m
A
V
0.4
V
150
0.1
90
110
Electrical AC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Transition frequency
q
y
Test Conditions
V
CE
= 8 V, I
C
= 15 mA, f = 500 MHz
V
CE
= 8 V, I
C
= 30 mA, f = 500 MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
Collector-emitter capacitance V
CE
= 8 V, f = 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
Noise figure
V
CE
= 6 V, I
C
= 5 mA, Z
S
= 75
W
,
f = 10 MHz
V
CE
= 6 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
f = 900 MHz
V
CE
= 6 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
f = 1.75 GHz
Power gain
V
CE
= 8 V, I
C
= 30 mA, Z
S
= 50
W
,
Z
L
= Z
Lopt
, f = 900 MHz
V
CE
= 8 V, I
C
= 30 mA, Z
S
= 50
W
,
Z
L
= Z
Lopt
, f = 1.75 GHz
Transducer gain
V
CE
= 8 V, I
C
= 30 mA, f = 900 MHz,
Z
0
= 50
W
Symbol
f
T
f
T
C
cb
C
ce
C
eb
F
F
F
G
pe
G
pe
S
21e
2
Min
Typ
7.2
7.4
0.4
0.2
0.8
0.9
1.2
1.8
14.0
10.5
14
Max
Unit
GHz
GHz
pF
pF
pF
dB
dB
dB
dB
dB
dB
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Document Number 85026
Rev. 2, 20-Jan-99
BFR183T/BFR183TW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de
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Document Number 85026
Rev. 2, 20-Jan-99
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