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BFR183_07

Description
NPN Silicon RF Transistor
File Size74KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet View All

BFR183_07 Overview

NPN Silicon RF Transistor

BFR183
NPN Silicon RF Transistor*
For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
f
T
= 8 GHz,
F
= 0.9 dB at 900 MHz
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
* Short term description
3
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFR183
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
2)
T
S
60 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
3)
1
Pb-containing
2
T
3
For
Marking
RHs
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Value
12
20
20
2
65
5
450
150
-65 ... 150
-65 ... 150
Value
200
Unit
V
mA
mW
°C
Unit
K/W
package may be available upon special request
S
is measured on the collector lead at the soldering point to the pcb
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-03-30
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