Not for new design, this product will be obsoleted soon
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
1
Features
•
•
•
•
•
High power gain
Low noise figure
e3
High transition frequency
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
SOT23
2
1
3
SOT23
Applications
Wide band amplifier up to GHz range.
3
1
2
SOT323
Mechanical Data
Typ:
BFR92A
Case:
SOT-23 Plastic case
Weight:
approx. 8.0 mg
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Typ:
BFR92AR
Case:
SOT-23 Plastic case
Weight:
approx. 8.0 mg
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Typ:
BFR92AW
Case:
SOT-323 Plastic case
Weight:
approx. 6.0 mg
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
2
3
19150
Electrostatic sensitive device.
Observe precautions for handling.
Parts Table
Part
BFR92A
BFR92AR
BFR92AW
Ordering code
BFR92AGELB-GS08
BFR92ARGELB-GS08
BFR92AW-GS08
+P2
+P5
WP2
Marking
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
SOT-23
SOT-23
SOT-323
Package
Document Number 85033
Rev. 1.5, 08-Sep-08
www.vishay.com
1
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
≤
60 °C
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
15
2
30
200
150
- 65 to + 150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Parameter
Junction ambient
1)
1)
Test condition
Symbol
R
thJA
Value
450
Unit
K/W
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
μm
Cu
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown
voltage
Test condition
V
CE
= 20 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
h
FE
15
65
100
150
Min
Typ.
Max
100
100
10
Unit
μA
nA
μA
V
DC forward current transfer ratio V
CE
= 10 V, I
C
= 14 mA
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Test condition
V
CE
= 10 V, I
C
= 14 mA,
f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 10 V, I
C
= 2 mA,
Z
S
= 50
Ω,
f = 800 MHz
V
CE
= 10 V, Z
S
= 50
Ω,
Z
L
= Z
Lopt
, I
C
= 14 mA,
f = 800 MHz
V
CE
= 10 V, I
C
= 14 mA,
d
IM
= 60 dB, f
1
= 806 MHz,
f
2
= 810 MHz, Z
S
= Z
L
= 50
Ω
V
CE
= 10 V, I
C
= 14 mA,
f = 800 MHz
Symbol
f
T
C
cb
C
ce
C
eb
F
G
pe
Min
Typ.
6
0.3
0.15
0.65
1.8
16
Max
Unit
GHz
pF
pF
pF
dB
dB
Linear output voltage - two tone
intermodulation test
Third order intercept point
V
1
= V
2
120
mV
IP
3
24
dBm
www.vishay.com
2
Document Number 85033
Rev. 1.5, 08-Sep-08
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Common Emitter S-Parameters
V
CE
/V
I
C
/mA
I
C
/mA
f/MHz
f/MHz
100
300
500
800
2
1000
1200
1500
1800
2000
100
300
500
800
5
5
1000
1200
1500
1800
2000
100
300
500
800
10
1000
1200
1500
1800
2000
100
300
500
800
14
1000
1200
1500
1800
5
2000
LIN
MAG
0.902
0.761
0.577
0.399
0.339
0.303
0.284
0.272
0.278
0.783
0.534
0.351
0.220
0.188
0.175
0.189
0.200
0.214
0.641
0.362
0.229
0.148
0.136
0.133
0.160
0.183
0.198
0.566
0.301
0.195
0.137
0.129
0.132
0.162
0.183
0.204
S11
ANG
-17.5
-50.2
-76.8
-105.3
-121.9
-138.1
-163.3
172.9
159.4
-27.2
-69.6
-97.6
-128.3
-145.2
-162.0
175.1
153.5
140.6
-38.1
-85.8
-116.7
-151.6
-168.5
176.8
158.3
139.4
130.4
-44.3
-94.2
-127.0
-164.6
-179.9
167.7
153.1
136.6
127.4
LIN
MAG
6.38
5.51
4.48
3.28
2.79
2.45
2.07
1.79
1.65
12.84
9.12
6.41
4.28
3.53
3.04
2.51
2.16
1.98
19.40
11.09
7.27
4.69
3.83
3.27
2.70
2.30
2.12
22.20
11.58
7.43
4.78
3.88
3.30
2.72
2.32
2.13
S21
ANG
164.6
137.8
117.8
98.9
90.0
82.1
71.4
62.5
57.3
155.8
122.8
104.8
89.8
82.9
76.5
67.8
60.2
55.8
146.3
112.0
97.3
84.9
79.0
73.4
65.7
58.9
54.8
141.5
108.1
94.6
83.2
77.6
72.3
64.9
58.1
54.1
LIN
MAG
0.025
0.064
0.086
0.104
0.114
0.124
0.140
0.157
0.171
0.023
0.052
0.068
0.091
0.107
0.124
0.149
0.175
0.194
0.020
0.043
0.062
0.089
0.108
0.127
0.156
0.184
0.203
0.019
0.041
0.060
0.089
0.109
0.128
0.157
0.185
0.205
S12
ANG
79.9
63.1
53.7
49.7
50.3
51.1
53.1
55.5
56.6
76.3
61.9
59.5
61.1
62.5
62.8
63.0
62.4
61.6
73.2
65.2
66.3
68.1
68.1
67.8
66.5
64.8
63.5
72.7
67.5
69.0
70.1
69.9
69.1
67.5
65.6
64.1
LIN
MAG
0.978
0.859
0.736
0.642
0.618
0.603
0.577
0.560
0.558
0.934
0.711
0.580
0.518
0.515
0.510
0.494
0.483
0.481
0.869
0.597
0.496
0.465
0.473
0.473
0.461
0.452
0.450
0.832
0.560
0.475
0.456
0.466
0.469
0.456
0.448
0.446
S22
ANG
-7.6
-19.3
-24.2
-25.3
-26.0
-28.0
-31.2
-33.9
-36.0
-12.7
-25.1
-25.6
-22.1
-22.2
-24.1
-27.3
-30.0
-32.6
-17.6
-26.0
-22.9
-18.1
-18.4
-20.6
-24.6
-27.4
-30.1
-19.4
-25.1
-20.9
-16.5
-17.1
-19.4
-23.4
-26.3
-29.2
Document Number 85033
Rev. 1.5, 08-Sep-08
www.vishay.com
3
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
V
CE
/V
I
C
/mA
I
C
/mA
f/MHz
f/MHz
100
300
500
800
20
1000
1200
1500
1800
2000
100
300
500
800
2
1000
1200
1500
1800
10
2000
100
300
500
800
5
1000
1200
1500
1800
2000
100
300
500
800
10
1000
1200
1500
1800
2000
100
300
500
800
10
14
1000
LIN
MAG
0.484
0.251
0.181
0.144
0.138
0.145
0.179
0.202
0.220
0.915
0.780
0.597
0.405
0.339
0.294
0.261
0.240
0.243
0.816
0.569
0.372
0.220
0.175
0.153
0.153
0.157
0.170
0.696
0.397
0.237
0.132
0.103
0.097
0.116
0.133
0.148
0.639
0.339
0.199
0.113
0.093
S11
ANG
-52.5
-106.2
-141.8
-177.4
169.3
159.1
148.3
133.7
125.9
-16.2
-46.7
-71.2
-97.6
-113.1
-129.6
-155.8
179.2
163.2
-24.3
-62.7
-87.9
-114.2
-129.6
-145.8
-175.7
158.0
143.4
-33.7
-75.7
-101.2
-130.2
-149.3
-165.8
167.2
141.3
129.4
-38.8
-82.4
-110.0
-144.1
160.9
LIN
MAG
24.55
11.67
7.37
4.70
3.82
3.26
2.67
2.28
2.10
6.32
5.56
4.57
3.37
2.87
2.53
2.13
1.84
1.70
12.50
9.15
6.55
4.41
3.63
3.13
2.59
2.22
2.04
18.83
11.20
7.41
4.81
3.92
3.35
2.76
2.36
2.16
21.41
11.61
7.52
4.83
3.93
S21
ANG
136.0
104.3
92.1
81.3
76.0
70.9
63.7
57.0
52.8
165.5
139.6
119.9
101.0
92.3
84.2
73.7
64.8
59.8
157.4
125.3
106.9
91.6
84.6
78.3
69.7
62.1
57.9
148.4
114.4
99.0
86.4
80.4
75.0
67.5
60.4
56.4
143.8
110.2
96.3
84.4
78.9
LIN
MAG
0.018
0.039
0.058
0.088
0.108
0.127
0.157
0.185
0.205
0.020
0.054
0.073
0.089
0.098
0.107
0.121
0.136
0.149
0.019
0.044
0.059
0.079
0.093
0.107
0.129
0.152
0.168
0.017
0.038
0.054
0.078
0.094
0.111
0.136
0.160
0.178
0.016
0.036
0.053
0.077
0.094
S12
ANG
72.0
69.5
71.5
72.0
71.4
70.6
68.4
66.4
64.8
80.5
65.1
55.8
52.2
53.0
54.3
56.8
59.2
61.1
77.2
63.6
60.6
62.3
63.9
64.8
65.5
65.5
65.3
74.6
66.4
67.0
68.9
69.4
69.5
69.0
67.9
66.8
73.2
67.5
69.4
70.7
71.1
LIN
MAG
0.788
0.531
0.466
0.456
0.469
0.472
0.461
0.453
0.452
0.981
0.883
0.778
0.692
0.677
0.663
0.643
0.630
0.630
0.947
0.761
0.647
0.592
0.590
0.589
0.576
0.567
0.567
0.896
0.666
0.577
0.553
0.560
0.561
0.551
0.545
0.549
0.866
0.636
0.562
0.549
0.556
S22
ANG
-20.7
-22.8
-18.3
-14.4
-15.3
-18.1
-22.4
-25.4
-28.4
-6.2
-16.1
-20.4
-21.6
-22.4
-24.0
-27.0
-29.6
-31.4
-10.3
-20.5
-21.1
-18.8
-19.1
-20.8
-24.1
-26.6
-28.7
-13.8
-20.8
-18.6
-15.5
-16.0
-18.2
-21.9
-24.4
-27.1
-15.2
-19.8
-16.9
-14.2
-14.9
www.vishay.com
4
Document Number 85033
Rev. 1.5, 08-Sep-08
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
V
CE
/V
I
C
/mA
I
C
/mA
f/MHz
f/MHz
1200
1500
1800
2000
100
300
500
800
20
1000
1200
1500
1800
2000
LIN
MAG
0.090
0.118
0.137
0.155
0.576
0.286
0.177
0.113
0.101
0.107
0.136
0.160
0.181
S11
ANG
179.0
158.6
137.7
125.7
-45.8
-91.7
-123.1
-161.1
-177.3
168.1
152.5
133.1
124.2
LIN
MAG
3.36
2.76
2.35
2.16
23.38
11.55
7.34
4.69
3.81
3.24
2.67
2.27
2.09
S21
ANG
73.7
66.4
59.5
55.6
138.5
106.1
93.4
82.2
77.1
72.0
64.8
58.1
54.0
LIN
MAG
0.110
0.136
0.161
0.178
0.015
0.034
0.051
0.075
0.092
0.109
0.134
0.159
0.176
S12
ANG
70.5
69.8
68.4
67.4
72.0
69.0
71.3
72.4
72.4
71.9
70.9
69.5
68.4
LIN
MAG
0.560
0.550
0.546
0.548
0.836
0.620
0.565
0.557
0.568
0.571
0.564
0.559
0.560
S22
ANG
-17.3
-21.0
-24.0
-26.5
-15.8
-17.7
-14.7
-12.6
-13.8
-16.4
-20.4
-23.5
-25.9
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
C
cb
- Collector Base Capacitance ( pF )
300
P
tot
- Total Power Dissipation (mW)
1.0
0.8
0.6
0.4
0.2
f = 1 MHz
0
0
4
8
12
16
20
V
CB
- Collector Base Voltage ( V )
250
200
150
100
50
0
0
20
40
60
80
100 120 140 160
T
amb
- Ambient Temperature (°C)
96 12159
13585
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
6000
f
T
- Transition Frequency (MHz)
5000
F -
Noise
Figure (dB)
4000
3000
2000
1000
0
0
12889
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
5
10
15
20
25
30
12891
V
CE
= 10
V
f = 500 MHz
V
CE
= 10
V
f =
800
MHz
Z
S
= 50
0
5
10
15
20
25
30
I
C
- Collector Current (mA)
I
C
- Collector Current (mA)
Figure 2. Transition Frequency vs. Collector Current
Figure 4. Noise Figure vs. Collector Current
Document Number 85033
Rev. 1.5, 08-Sep-08
www.vishay.com
5
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