BFR93/BFR93R
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
1
1
13 581
94 9280
9510527
13 581
2
3
3
2
BFR93 Marking: R1
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
BFR93R Marking: R4
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
12
2
40
200
150
–65 to +150
Unit
V
V
V
mA
mW
°
C
°
C
T
amb
≤
60
°
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thJA
Value
450
Unit
K/W
Document Number 85034
Rev. 3, 20-Jan-99
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Vishay Telefunken
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
DC forward current transfer ratio
Test Conditions
V
CE
= 20 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
V
CE
= 5 V, I
C
= 30 mA
Symbol Min
I
CES
I
CBO
I
EBO
V
(BR)CEO
12
h
FE
25
Typ
Max Unit
100
m
A
100 nA
10
m
A
V
150
50
Electrical AC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Test Conditions
V
CE
= 5 V, I
C
= 30 mA, f = 500 MHz
V
CB
= 5 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 5 V, I
C
= 4 mA, Z
S
= 50
W
,
f = 500 MHz
V
CE
= 5 V, I
C
= 30 mA, Z
L
= Z
Lopt
,
f = 500 MHz
V
CE
= 5 V, I
C
= 30 mA, Z
L
= Z
Lopt
,
f = 800 MHz
V
CE
= 5 V, I
C
= 30 mA, d
IM
= 60 dB,
f
1
= 806 MHz, f
2
= 810 MHz,
Z
S
= Z
L
= 50
W
V
CE
= 5 V, I
C
= 30 mA, f = 800 MHz
Symbol
f
T
C
cb
C
ce
C
eb
F
G
pe
G
pe
V
1
= V
2
IP
3
Min
Typ
5
0.5
0.15
1.1
1.9
18
13
240
Max
Unit
GHz
pF
pF
pF
dB
dB
dB
mV
Linear output voltage – two
tone intermodulation test
Third order intercept point
30
dBm
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Document Number 85034
Rev. 3, 20-Jan-99
BFR93/BFR93R
Vishay Telefunken
Common Emitter S–Parameters
Z
0
= 50
W,
T
amb
= 25
_
C, unless otherwise specified
S11
V
CE
/V
I
C
/mA
f/MHz
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
LIN
MAG
0.731
0.474
0.358
0.301
0.293
0.299
0.328
0.360
0.381
0.572
0.344
0.286
0.259
0.258
0.265
0.296
0.327
0.350
0.423
0.272
0.250
0.245
0.241
0.252
0.286
0.317
0.342
0.357
0.254
0.248
0.245
0.247
0.255
0.292
0.325
0.349
ANG
deg
–41.1
–98.0
–132.7
–166.0
179.5
167.4
152.7
138.0
130.1
–56.5
–117.2
–151.4
178.7
167.3
157.5
146.7
133.7
126.2
–73.5
–134.6
–165.9
168.7
158.9
152.0
143.2
130.9
123.6
–84.4
–144.3
–171.9
164.9
156.3
150.3
141.9
130.3
123.6
LIN
MAG
12.40
7.54
5.00
3.30
2.71
2.33
1.93
1.67
1.54
18.26
9.02
5.72
3.69
3.02
2.58
2.13
1.84
1.70
22.83
9.73
6.04
3.88
3.15
2.69
2.22
1.90
1.75
24.36
9.78
6.04
3.86
3.14
2.67
2.20
1.89
1.74
S21
ANG
deg
148.2
112.4
95.7
81.1
73.8
67.0
57.7
49.8
45.1
137.6
103.8
90.4
78.1
71.6
65.5
57.0
49.5
44.8
127.4
98.0
86.8
75.9
69.8
63.9
55.8
48.5
44.0
122.1
95.5
85.2
74.7
68.7
63.0
55.1
47.9
43.1
LIN
MAG
0.031
0.061
0.078
0.104
0.123
0.143
0.173
0.204
0.227
0.026
0.051
0.073
0.106
0.130
0.152
0.186
0.220
0.243
0.022
0.047
0.072
0.109
0.134
0.158
0.193
0.228
0.252
0.021
0.046
0.072
0.110
0.136
0.160
0.195
0.230
0.254
S12
ANG
deg
70.1
55.9
55.9
59.6
61.2
61.8
62.0
61.5
60.6
68.0
62.0
64.7
66.7
66.8
66.0
64.3
62.3
60.5
67.3
68.3
70.5
70.4
69.3
67.7
65.0
62.4
60.2
68.1
71.2
72.6
71.5
70.1
68.2
65.5
62.5
60.3
LIN
MAG
0.891
0.618
0.504
0.458
0.460
0.457
0.442
0.430
0.427
0.796
0.499
0.413
0.392
0.400
0.400
0.387
0.374
0.371
0.688
0.422
0.361
0.356
0.368
0.369
0.355
0.343
0.340
0.629
0.393
0.346
0.347
0.360
0.362
0.347
0.337
0.333
S22
ANG
deg
–17.4
–28.8
–27.6
–24.5
–25.5
–28.5
–34.0
–38.4
–42.5
–23.6
–29.7
–25.5
–21.2
–22.2
–25.6
–31.3
–35.9
–40.1
–28.0
–28.1
–22.3
–17.9
–19.5
–23.5
–29.6
–34.1
–38.5
–29.4
–26.0
–20.0
–16.1
–18.2
–22.5
–28.6
–33.5
–38.0
5
10
5
20
30
Document Number 85034
Rev. 3, 20-Jan-99
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BFR93/BFR93R
Vishay Telefunken
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
C
cb
– Collector Base Capacitance ( pF )
300
P
tot
– Total Power Dissipation ( mW )
250
200
150
100
50
0
0
96 12159
1.0
0.8
0.6
0.4
0.2
f=1MHz
0
0
4
8
12
16
20
V
CB
– Collector Base Voltage ( V )
20
40
60
80
100 120 140 160
13589
T
amb
– Ambient Temperature (
°C
)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
6000
f
T
– Transition Frequency ( MHz )
5000
4000
3000
2000
1000
0
0
13588
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
3.5
3.0
F – Noise Figure ( dB )
2.5
2.0
1.5
1.0
0.5
0
V
CE
=5V
f=500MHz
Z
S
=50
W
0
12894
V
CE
=5V
f=500MHz
8
16
24
32
40
5
10
15
20
25
30
I
C
– Collector Current ( mA )
I
C
– Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
Figure 4. Noise Figure vs. Collector Current
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Document Number 85034
Rev. 3, 20-Jan-99
BFR93/BFR93R
Vishay Telefunken
V
CE
= 5 V, I
C
= 30 mA , Z
0
= 50
W
S
11
j
120°
j0.5
j2
1.0
150°
j0.2
2.0 GHz
j5
0.5
30°
S
12
90°
1.5
2.0 GHz
60°
0
–j0.2
13 530
S
21
0.1
90°
60°
150°
180°
2.0 GHz
8
16
0°
0
–j0.2
–150°
–30°
–120°
13 532
–60°
–90°
13 533
Figure 6. Forward transmission coefficient
Document Number 85034
Rev. 3, 20-Jan-99
ÁÁ ÁÁÁÁÁÁ
Á Á
ÁÁ ÁÁÁÁÁÁ
Á Á
ÁÁÁÁÁÁÁÁÁÁ
Á
ÁÁÁÁÁÁÁÁÁÁ
Á
0.2
1
2
5
0.3
0.1
–j0.5
–j
–j2
1.0
0.5
1
–j5
0.1
180°
0.08
0.16
0°
–150°
–30°
–120°
13 531
–60°
–90°
Figure 5. Input reflection coefficient
Figure 7. Reverse transmission coefficient
S
22
j
j0.5
0.3
0.5
0.2
0.5
1
5
30°
j0.2
j5
j2
0.8
1
–j5
2.0 GHz
0.1
–j0.5
–j
–j2
Figure 8. Output reflection coefficient
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