BFR96
N-P-N bipolar silicon RF transistor
in plastic package SOT-37
5.2max
5.5max
1.5max
9.0max
1.0max
1
5.5max
2
3
Pinouts:
1- Base, 2- Collector, 3-Emitter
Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Parameter, unit
Collector- base voltage, V
Collector- emitter voltage, V
Emitter- base voltage, V
Collector current, mA
Power dissipation, mW
Limits
20
15
3
75
700
Characteristics (T
A
= 25°C)
Symbol
f
T
h
FE
I
CBO
G
PS
F
C
C
Parameter, unit, test conditions
Transition frequency, GHz,
I
E
=50mA, V
CB
=10V
DC current gain,
I
E
=50mA, V
CB
=10V
Collector cut-off current, nA,
I
E
= 0mA, V
CB
=10V
Power gain, dB,
I
E
=50mA, V
CE
=10V, f=500MHz
Noise figure, dB
I
E
=50mA, V
CE
=10V, f=500MHz
Collector capacitance, pF,
V
CB
=10V, f= 1MHz
Limits
min
max
3.2
50
100
13.0
4.0
2.0
Planeta
Electronic
company
JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
Ph/Fax:
+7 (81622) 3-17-36, 3-32-86
E-mail:
planeta@novgorod.net
http://www.planetasemi.com
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