BFS17S
NPN Silicon RF Transistor
•
For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
•
BFS17S: For orientation in reel see
package information below
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
4
5
6
1
2
3
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFS17S
Maximum Ratings
Parameter
Marking
Pin Configuration
Package
MCs
1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Value
15
25
2.5
25
50
280
150
-65 ... 150
-65 ... 150
Value
≤
240
Unit
K/W
mW
°C
mA
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current,
f
= 10 MHz
Total power dissipation
2)
T
S
≤
93 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
3)
1
Pb-containing
2
T
3
For
package may be available upon special request
S is measured on the collector lead at the soldering point to the pcb
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2007-03-30
1
BFS17S
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 2.5 V,
I
C
= 0
DC current gain-
I
C
= 2 mA,
V
CE
= 1 V, pulse measured
I
C
= 25 mA,
V
CE
= 1 V, pulse measured
Collector-emitter saturation voltage
I
C
= 10 mA,
I
B
= 1 mA
V
CEsat
h
FE
40
20
-
-
70
0.1
150
-
0.4
I
EBO
I
CBO
-
-
-
-
-
-
0.05
10
100
V
(BR)CEO
15
-
-
typ.
max.
Unit
V
µA
-
V
2007-03-30
2
BFS17S
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics
(verified by random sampling)
GHz
Transition frequency
f
T
I
C
= 2 mA,
V
CE
= 5 V,
f
= 200 MHz
I
C
= 25 mA,
V
CE
= 5 V,
f
= 200 MHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 5 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 2 mA,
V
CE
= 5 V,
Z
S
= 50
Ω,
f
= 800 MHz
Transducer gain
I
C
= 20 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50Ω,
f
= 500 MHz
Third order intercept point at output
V
CE
= 5 V,
I
C
= 20 mA,
f
= 800 MHz,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
1dB Compression point
I
C
= 20 mA,
V
CE
= 5 V,
Z
S
=
Z
L
= 50Ω,
f
= 800 MHz
P
-1dB
-
11
-
-
IP
3
-
22.5
-
dBm
|S
21e
|
2
-
14
-
dB
F
-
3
5
dB
C
eb
-
0.9
1.45
C
ce
-
0.2
-
C
cb
1
1.3
-
1.4
2.5
0.55
-
-
0.8
pF
2007-03-30
3
京公网安备 11010802033920号
EEWORLD
