BTB/BTA10
Discrete Triacs(Non-Isolated/Isolated)
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
T2
G
T2
T1
G
T1
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
I
TSM
I
²
t
dI/dt
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
²
t Value for
fusing
Critical rate of rise of on-state current
_
I
G
= 2 x
I
GT
, tr < 100 ns
TO-220AB
F = 60 Hz
F = 50 Hz
Tc = 105°C
t = 16.7 ms
t = 20 ms
Value
10
105
100
55
Tj = 125°C
50
Unit
A
A
A
²
s
A/µs
tp = 10 ms
F = 120 Hz
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
I
GM
P
G(AV)
T
stg
T
j
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature
range
tp = 10 ms
tp = 20 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
V
DRM
/V
RRM
+ 100
V
A
W
°C
4
1
- 40 to + 150
- 40 to + 125
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s
SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
Symbol
Test Conditions
Quadrant
CW
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= 12 V
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open Tj = 125°C
Tj = 125°C
I - III
II
MIN.
MIN.
(dI/dt)c (2) Without snubber
R
L
= 33
Ω
R
L
= 3.3 k
Ω
Tj = 125°C
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
MAX.
35
50
60
500
5.5
35
1.3
0.2
50
70
80
1000
9.0
V/µs
A/ms
BTA/BTB
BW
50
mA
V
V
mA
mA
Unit
BTB/BTA10
Discrete Triacs(Non-Isolated/Isolated)
s
STANDARD (4 Quadrants)
Symbol
I
GT
(1)
V
D
= 12 V
V
GT
V
GD
I
H
(2)
I
L
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
I - III - IV
II
R
L
= 3.3
Ω
Tj = 125°C
Test Conditions
R
L
= 33
Ω
Quadrant
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
Value
50
100
1.3
0.2
50
50
100
400
10
V/µs
V/µs
Unit
mA
V
V
mA
mA
dV/dt (2) V
D
= 67 % V
DRM
gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c =4.4 A/ms
Tj = 125°C
STATIC CHARACTERISTICS
Symbol
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 14 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
40
5
1
Unit
V
V
m
Ω
µ
A
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
THERMAL RESISTANCES
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (AC)
Junction to ambient
Parameter
Value
1.5
60
Unit
°C/W
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
200 V ~~ 1000 V
BTBV/BTA10
X
X
50 mA
Standard
TO-220AB
Sensitivity
Type
Package
OTHER INFORMATION
Part Number
BTB/BTA10
Marking
BTB/BTA10
Weight
2.3 g
Base
quantity
250
Packing
mode
Bulk
BTB/BTA10
Discrete Triacs(Non-Isolated/Isolated)
F ig. 1 Maximum power dis s ipation vers us R MS
:
on-s ta te current (full cycle).
P (W)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
F ig. 2 R MS on-state current vers us cas e
:
temperature (full cycle).
IT (R MS ) (A )
12
11
10
9
8
7
6
5
4
3
2
1
0
B TB
B TA
IT (R MS ) (A )
0
1
2
3
4
5
6
7
8
9
10
T c (°C )
0
25
50
75
100
125
F ig. 3 R elative variation of thermal impeda nce
:
versus pulse duration.
K =[Zth/R th]
Zth(j-c )
F ig. 4
:
values ).
IT M (A )
100
On-s tate
cha racteris tics
(maximum
1E +0
T j max.
V to = 0.85
V
R d = 40 W
m
T j max
1E -1
Zth(j-a)
10
T j=25°C
tp (s )
1E -2
1E -3
1E -2
1E -1
1E +0
1E +1
1E +2 5E +2
V T M (V )
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
F ig. 5 S urge peak on-state current vers us
:
number of cycles .
F ig. 6 Non-repetitive s urge pea k on-s tate
:
current for a s inus oidal puls e with width
tp < 10ms, and corres ponding value of I²t.
IT S M (A ),I² (A ² )
t
s
1000
T j initial=25°C
IT S M (A )
110
100
90
80
70
60
50
40
30
20
10
0
t=20ms
Non repetitive
T j initial=25°C
One cycle
dI/dt limitation:
50A /µs
IT S M
100
R epetitive
T c=95°C
I²t
Number of ycles
c
1
10
100
1000
10
0.01
0.10
tp (ms )
1.00
10.00
BTB/BTA10
Discrete Triacs(Non-Isolated/Isolated)
F ig. 7 R ela tive variation of gate trigger current,
:
holding current and latching current vers us
junction temperature (typical values).
IG T,IH,IL [T j] / IG,IH,IL [T j=25°C ]
T
F ig. 8 R ela tive variation of critica l rate of decreas e
:
of main current versus (dV /dt)c (typical values).
2.5
2.0
2.0
1.8
1.6
1.4
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
C
B
IG T
1.5
1.0
0.5
T j(°C )
0.0
-40
-20
0
20
40
60
80
100
120
140
IH & IL
1.2
1.0
0.8
0.6
0.4
0.1
1.0
(dV /dt)c (V /µs )
10.0
B W/C W
100.0
F ig. 9 R elative varia tion of critical rate of
:
decreas e of main current vers us junction
temperature.
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
6
5
4
3
2
1
0
0
25
50
T j (°C )
75
100
125
京公网安备 11010802033920号
EEWORLD
