TF12A80
Standard Triac
Symbol
○
2.T2
V
DRM
=
800V
I
T(RMS)
= 12 A
TO-220F
▼
▲
○
3.Gate
I
TSM
= 126A
1
2
3
1.T1
○
Features
Repetitive Peak Off-State Voltage :
800V
◆
R.M.S On-State Current ( I
T(RMS)
= 1 A )
◆
High Commutation dv/dt
◆
General Description
This device is suit able for low power AC switching application, phase control application such a s fan
speed and temperature modulation control, lighting control and static switching relay where high sensi-
tivity is required in all four quadrants.
This device may substitute for BTA12-600, BTB12-600, BT138-600, BCR12CM12L, TM1261M/S series.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
G(AV)
I
GM
T
J
T
STG
( Tj = 25°C unless otherwise specified )
Condition
Sine wave, 50 to 60 Hz
T
j
= 125 °C,
Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp =
10ms
Tj=125°C
T
j
=125°C
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
Average Gate Power Dissipation
Peak Gate Current
Operating Junction Temperature
Storage Temperature
Ratings
800
12
120/126
72
1
2
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
2
s
W
A
°C
°C
J u l y,
2010. Rev.2
copyright @ Apollo Electron Co., Ltd. All rights reserved.
1/6
TF12A80
Electrical Characteristics
(Tj=25 °C unless otherwise specified)
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage
Holding Current
T
J
= 125 °C, V
D
= V
DRM
R
L
=3.3kΩ
T
J
= 125 °C
V
D
=2/3 V
DRM
I
T
=0.2A
Gate Trigger Voltage
V
D
=
12
V, R
L
=30
Ω
Gate Trigger Current
V
D
=
12V,
R
L
=30
Ω
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
T
j
= 125 °C
I
TM
= 17 A, tp=380㎲
Ratings
Min.
---
Typ.
---
Max.
2
.0
1.55
30
30
30
1.5
1.5
1.5
-
─
50
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
I
-GT3
V
+GT1
V
-GT1
V
-GT3
V
GD
dv/dt
I
H
mA
V
---
─
─
─
─
─
─
---
─
─
─
─
─
─
─
─
--
mA
V
0.2
V
200
─
V
/㎲
mA
2/6
TF12A80
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
10
1
V
GM
(10V)
10
2
P
G(AV)
(1W)
25
℃
10
On-State Current [A]
Gate Voltage [V]
P
GM
(5W)
T
J
= 125 C
10
1
o
I
GM
(2A)
0
T
J
= 25 C
10
0
o
10
-1
V
GD
(0.2V)
1
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
16
14
Fig 4. On State Current vs.
Allowable Case Temperature
130
Power Dissipation [W]
π
θ
360°
θ
2
π
12
10
8
6
4
2
0
0
2
θ
= 180
o
θ
= 150
o
θ
= 120
θ
= 90
θ
= 60
θ
= 30
o
o
o
o
Allowable Case Temperature [
o
C]
120
110
100
θ
: Conduction Angle
π
90
80
70
θ
θ
= 30
2
π
o
o
θ
= 60
θ
θ
θ
θ
8
10
12
θ
360°
θ
: Conduction Angle
= 90
o
= 120
o
= 150
o
= 180
14
o
4
6
8
10
12
14
0
2
4
6
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
200
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
Surge On-State Current [A]
150
V
GT
(t C)
o
o
60Hz
100
V
GT
(25 C)
V
1
_
GT3
V
V
+
GT1
_
GT1
50
50Hz
0
0
10
10
1
10
2
0.1
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/6
TF12A80
Fig 7. Gate Trigger Current vs.
Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
I
I
+
GT1
_
GT1
Transient Thermal Impedance [ C/W]
I
GT
(25 C)
I
GT
(t C)
o
o
o
1
I
0.1
-50
_
GT3
0
50
100
o
150
0.1
-2
10
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
4/6
TF12A80
TO-220F Package Dimension
Sym bol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MIN
9.88
15.30
2.95
10.30
0.95
1.81
0.50
3.00
4.35
6.20
0.41
2.30
2.53
2.34
IN C H ES
TYP
10.08
15.50
3.00
10.50
1.08
1.84
0.70
3.20
4.45
6.40
0.51
2.50
2.73
2.54
MAX
10.28
15.70
3.05
10.70
1.20
1.87
0.90
3.40
4.55
6.60
0.61
2.70
2.93
2.74
MILLIMETER S
MIN
25.10
25.60
39.37
38.86
7.49
7.62
26.16
26.67
2.41
2.74
4.60
4.67
1.27
1.78
7.62
8.13
11.05
11.30
15.75
16.26
1.03
1.28
5.84
6.35
6.43
6.93
5.94
6.45
TYP
26.11
39.88
7.75
27.18
3.05
4.75
2.29
8.64
11.56
16.76
1.54
6.86
7.44
6.96
5/6
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