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BTA12-600BW3G

Description
600 V, 12 A, SNUBBERLESS TRIAC, TO-220AB
CategoryAnalog mixed-signal IC    Trigger device   
File Size138KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BTA12-600BW3G Overview

600 V, 12 A, SNUBBERLESS TRIAC, TO-220AB

BTA12-600BW3G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionLEAD FREE, CASE 221A-07, 3 PIN
Contacts3
Manufacturer packaging code221A-07
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys DescriptionNULL
Shell connectionISOLATED
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage2000 V/us
Maximum DC gate trigger current50 mA
Maximum DC gate trigger voltage1.1 V
Maximum holding current50 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum leakage current2 mA
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current12 A
Off-state repetitive peak voltage600 V
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSNUBBERLESS TRIAC
Base Number Matches1
BTA12-600BW3G,
BTA12-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full−wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
http://onsemi.com
Blocking Voltage to 800 V
On-State Current Rating of 12 A RMS at 25°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt
2000 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating dI/dt
2.5 A/ms minimum at 125°C
Internally Isolated (2500 V
RMS
)
These are Pb−Free Devices
Rating
Symbol
V
DRM,
V
RRM
600
800
I
T(RMS)
I
TSM
12
105
A
A
Value
Unit
V
1
2
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
MT2
G
4
MT1
MARKING
DIAGRAM
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Peak Repetitive Off−State Voltage (Note 1)
(T
J
=
−40
to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA12−600BW3G
BTA12−800BW3G
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
C
= 80°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
C
= 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
Non−Repetitive Surge Peak Off−State
Voltage (T
J
= 25°C, t = 10ms)
Peak Gate Current (T
J
= 125°C, t = 20ms)
Peak Gate Power
(Pulse Width
1.0
ms,
T
C
= 80°C)
Average Gate Power (T
J
= 125°C)
Operating Junction Temperature Range
Storage Temperature Range
RMS Isolation Voltage
(t = 300 ms, R.H.
30%, T
A
= 25°C)
BTA12−xBWG
AYWW
3
TO−220AB
CASE 221A
STYLE 12
x
A
Y
WW
G
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
I
2
t
V
DSM/
V
RSM
I
GM
P
GM
P
G(AV)
T
J
T
stg
V
iso
46
V
DSM/
V
RSM
+100
4.0
20
1.0
−40
to +125
−40
to +150
2500
A
2
sec
V
A
W
W
°C
°C
V
1
2
3
4
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
No Connection
ORDERING INFORMATION
Device
BTA12−600BW3G
BTA12−800BW3G
Package
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
August, 2008
Rev. 0
1
Publication Order Number:
BTA12−600BW3/D

BTA12-600BW3G Related Products

BTA12-600BW3G BTA12-800BW3G
Description 600 V, 12 A, SNUBBERLESS TRIAC, TO-220AB 800 V, 12 A, SNUBBERLESS TRIAC, TO-220AB
Brand Name ON Semiconductor ON Semiconduc
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker ON Semiconductor ON Semiconductor
Parts packaging code TO-220AB TO-220AB
package instruction LEAD FREE, CASE 221A-07, 3 PIN LEAD FREE, CASE 221A-07, 3 PIN
Contacts 3 3
Manufacturer packaging code 221A-07 221A-07
Reach Compliance Code not_compliant _compli
ECCN code EAR99 EAR99
Factory Lead Time 1 week 1 week
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Critical rise rate of minimum off-state voltage 2000 V/us 2000 V/us
Maximum DC gate trigger current 50 mA 50 mA
Maximum DC gate trigger voltage 1.1 V 1.1 V
Maximum holding current 50 mA 50 mA
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Maximum leakage current 2 mA 2 mA
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum rms on-state current 12 A 12 A
Off-state repetitive peak voltage 600 V 800 V
surface mount NO NO
Terminal surface Tin (Sn) Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Trigger device type SNUBBERLESS TRIAC SNUBBERLESS TRIAC
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